Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Kiseok Suh"'
Publikováno v:
Journal of Luminescence. 128:565-572
Mesophase silica thin film doped with in-situ formed ternary Eu complex was synthesized by adding ligands (DBM=dibenzoylmethane, phen=1,10-phenanthroline), Eu ions (EuCl 3 ·6H 2 O), and Pluronic P123 triblock copolymer into hydrolyzed tetramethoxy-s
Publikováno v:
Optical Materials. 30:497-501
The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon–aluminum oxides (Si–Al oxides) films derived from sol–gel solutions is reported. Continuous and crack-free Si–Al oxide film could be successfully coate
Publikováno v:
Topics in Applied Physics ISBN: 9783642105050
On-chip light sources are a critical part for an integrated Si photonic technology, yet they lag other photonic components in their level of development. In this chapter, Er used as an optical dopant and utilizing its intra-4f transition at 1.54µm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527e6ce5c8fa638be05a9585b8f4b261
https://doi.org/10.1007/978-3-642-10506-7_4
https://doi.org/10.1007/978-3-642-10506-7_4
Publikováno v:
SPIE Proceedings.
We report on fabricating Er x Y 2-x SiO 5 nanocrystals using ErCl 3 •6H 2 O and YCl 3 •6H 2 O solutions and Si nanowires grown by VSL method. Use of crystalline host allows incorporation of up to 25 at % Er without clustering and loss of optical
Publikováno v:
2008 5th IEEE International Conference on Group IV Photonics.
Ridge-type ErxY2-xSiO5 waveguides were fabricated. Amorphous ErxY2-xSiO5 was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scatter
Publikováno v:
2007 Conference on Lasers and Electro-Optics - Pacific Rim.
Concentration controlled, nanocrystalline Er doped Y2SiO5 particles were fabricated. Using 2-level model the cooperative upconversion coefficient was determined. We find that Er-doped YSO has much lower cooperative upconversion than silica, enabling
Publikováno v:
2007 Conference on Lasers and Electro-Optics - Pacific Rim.
Optically active and electrically excitable silicon pillar structure is fabricated by electrochemical etching method. Silicon pillars structure is made by etching porous silicon layers in hydrofluoric acid-based solution. Afterwards, silicon pillars
Publikováno v:
Nano letters. 5(12)
Self-organized Si-Er heterostructure nanowires showed promising 1.54 microm Er(3+) optical activity. Si nanowires of about 120-nm diameter were grown vertically on Si substrates by the vapor-liquid-solid mechanism in an Si-Er-Cl-H(2) system using an
Publikováno v:
MRS Proceedings. 832
Optical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquid-solid method using Au catalysts and H2 diluted SiCl4. Afterwards, Er-do
Autor:
Jee Soo Chang, Hansuek Lee, Gun Yong Sung, Minkyung Lee, Namkyoo Park, Kiseok Suh, Jung H. Shin
Publikováno v:
Optics Express. 18:7724
Single-phase, polycrystalline Er(x)Y(2-x)SiO(5) thin films were deposited by reactive ion-beam sputter deposition and rapid thermal annealing. Due to the crystalline nature, the silicate thin films provide peak Er(3+) emission cross-section of 0.9 +/