Zobrazeno 1 - 10 of 60 pro vyhledávání: '"Kiseok Lee"'
1
Akademický článek
Fault Coverage Re-Evaluation of Memory Test Algorithms With Physical Memory Characteristics
Autor: Kiseok Lee, Jeonghwan Kim, Sanghyeon Baeg
Publikováno v: IEEE Access, Vol 9, Pp 124632-124639 (2021)
A memory fault model (FM) is an abstraction of the physical mechanism of memory failure. When the physical failure mechanisms are not fully represented in FMs, the coverage of the FMs can be different from that of the failure mechanisms. However, it
Externí odkaz: https://doaj.org/article/54e8003aa6e74e91a31afed5f6fba598
Zobrazit plný text záznamu
2
Akademický článek
Inhibition of pre-mRNA splicing by a synthetic Blom7α-interacting small RNA.
Autor: Marlies Löscher, Markus Schosserer, Eric Dausse, Kiseok Lee, Paul Ajuh, Regina Grillari-Voglauer, Angus I Lamond, Jean-Jacques Toulmé, Johannes Grillari
Publikováno v: PLoS ONE, Vol 7, Iss 10, p e47497 (2012)
Originally the novel protein Blom7α was identified as novel pre-mRNA splicing factor that interacts with SNEV(Prp19/Pso4), an essential protein involved in extension of human endothelial cell life span, DNA damage repair, the ubiquitin-proteasome sy
Externí odkaz: https://doaj.org/article/aeaeb3d1bbb14d5db549dd8e69f96dfb
Zobrazit plný text záznamu
3
Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C
Autor: Yongjoon Choi, Kiseok Lee, Dae Seop Byeon, Dae Hong Ko, Seunghyun Baik, Dongmin Yoon, Choonghee Cho
Publikováno v: Journal of the Korean Physical Society. 78:712-718
High-order silane precursors, including trisilane, are candidates for the low-temperature epitaxy process owing to the low energy of Si–Si bond. Higher order silanes are regarded as being more reactive than lower order ones. We compared the SiGe ep
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3246dc4e52e957ee1333b22e3a5cc405
https://doi.org/10.1007/s40042-021-00134-x
Zobrazit plný text záznamu
8
Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD
Autor: Dae Seop Byeon, Yongjoon Choi, Kiseok Lee, Dae Hong Ko, Choonghee Cho, Seunghyun Baik, Dongmin Yoon
Publikováno v: Coatings
Volume 11
Issue 5
Coatings, Vol 11, Iss 568, p 568 (2021)
Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fe6549d3f68b2579632334cc4734aa5
Zobrazit plný text záznamu
10
The Role of DNA Methylation in Transcriptional Regulation of Pro-Nociceptive Genes in Rat Trigeminal Ganglia
Autor: Youping Zhang, KiSeok Lee, Guang Bai, Holly Ross, Jin Y. Ro
Publikováno v: Epigenetics Insights, Vol 13 (2020)
Epigenetics Insights
Epigenetic modulation by DNA methylation is associated with aberrant gene expression in sensory neurons, which consequently leads to pathological pain responses. In this study, we sought to investigate whether peripheral inflammation alters global DN
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfb0d765218ef6f0bd6ebbfba5ab8463
https://doaj.org/article/d69e0d79dfda437181a649882329ef1c
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje