Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Kiryong Song"'
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 12:648-657
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc2a448f8da13de6216eb94ce03e03c5
https://doi.org/10.1109/tthz.2022.3202045
https://doi.org/10.1109/tthz.2022.3202045
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:1797-1809
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8dbae7541015e2fb94c7e5f1bc7f91e
https://doi.org/10.1109/tmtt.2021.3118305
https://doi.org/10.1109/tmtt.2021.3118305
Publikováno v:
2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a26ff7af0690cb27e94bdb6ab53ec5c
https://doi.org/10.1109/rfit54256.2022.9882487
https://doi.org/10.1109/rfit54256.2022.9882487
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 10:419-422
A 300-GHz quadrature voltage-controlled oscillator (QVCO) integrated with a pair of mixers based on an InP heterojunction bipolar transistor (HBT) technology has been developed. A super-harmonic coupling technique was applied to generate the quadratu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7e1d7e2c99d4eaa8f3b29ec2d0dcd3
https://doi.org/10.1109/tthz.2020.2972539
https://doi.org/10.1109/tthz.2020.2972539
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 41:202-214
In this work, a 300-GHz 7 × 7 detector array based on a 65-nm Si CMOS technology has been developed and transmission imaging was performed using the detector array without any optical elements. The detector array consists of a 7-by-7 arrangement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5d2225e68aee40032d3aef83d63048
https://doi.org/10.1007/s10762-019-00664-3
https://doi.org/10.1007/s10762-019-00664-3
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 9:215-218
A single-pole single-throw (SPST) switch operating around 300 GHz has been developed in this letter based on a 65-nm CMOS technology. The SPST switch adopts a novel coupled-line topology, in which MOSFETs are employed as a variable impedance componen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac60aad0e4d5397c22dba99b60200e6e
https://doi.org/10.1109/tthz.2019.2898815
https://doi.org/10.1109/tthz.2019.2898815
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adoptin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba1d5b278fb7c920df8ae1a23d080f98
https://doi.org/10.1109/ims30576.2020.9223991
https://doi.org/10.1109/ims30576.2020.9223991
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 8:784-792
A 283-GHz fully integrated phase-locked loop (PLL) based on a 65-nm CMOS technology is presented. A triple-push ring voltage-controlled oscillator and a frequency divider chain (/16,384) composed of 2 injection-locked frequency dividers are developed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f973f096334b5756fd8c0d5c7ffecac8
https://doi.org/10.1109/tthz.2018.2875796
https://doi.org/10.1109/tthz.2018.2875796
Autor:
Daekeun Yoon, Jungsoo Kim, Bernd Tillack, Jae-Sung Rieh, Kiryong Song, Mehmet Kaynak, Jongwon Yun
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 8:482-491
In this paper, three-dimensional (3-D) terahertz (THz) tomography was demonstrated with a signal source and imagers based on transistor circuits fabricated with standard semiconductor technologies. For the signal source, a 300-GHz oscillator based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b966e522fc344a1cc301f1daf6778c54
https://doi.org/10.1109/tthz.2018.2851542
https://doi.org/10.1109/tthz.2018.2851542
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 18:536-540
A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b683b7284c8783420e1e40ec24caa4ae
https://doi.org/10.5573/jsts.2018.18.4.536
https://doi.org/10.5573/jsts.2018.18.4.536