Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Kirsten E Moselund"'
Autor:
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon wa
Externí odkaz:
https://doaj.org/article/f45527129cc44c06a14be2f78a4439a3
Autor:
Svenja Mauthe, Yannick Baumgartner, Marilyne Sousa, Qian Ding, Marta D. Rossell, Andreas Schenk, Lukas Czornomaz, Kirsten E. Moselund
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data recep
Externí odkaz:
https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44
Autor:
Mohammed Zeghouane, Gabin Grégoire, Emmanuel Chereau, Geoffrey Avit, Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid, Pierre-Marie Coulon, Philip Shields, Nebile Isik Goktas, Ray R. LaPierre, Agnès Trassoudaine, Yamina André, Evelyne Gil
Publikováno v:
Crystal Growth & Design. 23:2120-2127
Autor:
Elisabetta Corti, Joaquin Antonio Cornejo Jimenez, Kham M. Niang, John Robertson, Kirsten E. Moselund, Bernd Gotsmann, Adrian M. Ionescu, Siegfried Karg
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area
Externí odkaz:
https://doaj.org/article/a06c4f3d0a1b4a269e97432bb1b6d0be
Autor:
Markus Scherrer, Noelia Vico Triviño, Svenja Mauthe, Preksha Tiwari, Heinz Schmid, Kirsten E. Moselund
Publikováno v:
Applied Sciences, Vol 11, Iss 4, p 1887 (2021)
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable inte
Externí odkaz:
https://doaj.org/article/b87e6926e63c4abfb8a31859a021b8b8
Autor:
Pengyan Wen, Preksha Tiwari, Markus Scherrer, Emanuel Lörtscher, Kirsten E. Moselund, Bernd Gotsmann
Publikováno v:
2022 Asia Communications and Photonics Conference (ACP).
Autor:
Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, Heike Riel
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 176-183 (2015)
In this paper, we introduce p-channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III-V nanowire integration on Si substrates
Externí odkaz:
https://doaj.org/article/a1b08e3ce7e24b2696723827b13cd2f9
Publikováno v:
Semiconductor Science and Technology. 38:053001
The local integration of III–Vs on Si is relevant for a wide range of applications in electronics and photonics, since it combines a mature and established materials platform with desired physical properties such as a direct and tuneable bandgap an
Autor:
Bernd Gotsmann, Elisabetta Corti, Siegfried Karg, Suman Datta, Kirsten E. Moselund, John Robertson, Kham M. Niang, A. Khanna
Publikováno v:
IEEE Electron Device Letters
Oscillatory neural networks based on insulator to metal transition of VO2 switches are implemented for image recognition. The VO2 oscillators are fabricated on silicon in a CMOS compatible process. A fully-connected network of coupled oscillators is
Autor:
Pengyan Wen, Preksha Tiwari, Markus Scherrer, Emanuel Lörtscher, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
ACS Photonics
There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, signifi-cant thermal issues affect their operation. The complexity of geometrical parameters and the various materials involv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08a2b3c17e9c40d171e304ec1bf7c7b2
http://arxiv.org/abs/2112.06257
http://arxiv.org/abs/2112.06257