Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Kiroubanand Sankaran"'
Autor:
Valeria Founta, Jean-Philippe Soulié, Kiroubanand Sankaran, Kris Vanstreels, Karl Opsomer, Pierre Morin, Pieter Lagrain, Alexis Franquet, Danielle Vanhaeren, Thierry Conard, Johan Meersschaut, Christophe Detavernier, Joris Van de Vondel, Ingrid De Wolf, Geoffrey Pourtois, Zsolt Tőkei, Johan Swerts, Christoph Adelmann
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::956d2de7d2438d87c22d241aaaaec21e
https://doi.org/10.2139/ssrn.4048681
https://doi.org/10.2139/ssrn.4048681
Publikováno v:
Physical review materials
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and energy consumption. Here, we generalize a commonly considered figure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5c817e7cba9f52ad2c4bc872a851f9f
http://arxiv.org/abs/2111.11121
http://arxiv.org/abs/2111.11121
Autor:
Rutger Duflou, Gautam Gaddemane, Kiroubanand Sankaran, Michel Houssa, Geoffrey Pourtois, Aryan Afzalian
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
For the last 15 years, two-dimensional (2D) materials are being actively studied as a possible replacement for silicon. Due to their layered nature, the materials can be scaled down to a single atomic layer, favouring extreme device scaling. In addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d5c7b4c1dfabff6a4a6f11d2f1e202
https://doi.org/10.1109/sispad54002.2021.9592532
https://doi.org/10.1109/sispad54002.2021.9592532
Publikováno v:
Physical review materials 5(5), 056002 (2021). doi:10.1103/PhysRevMaterials.5.056002
Physical review materials
Physical review materials
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b883f49565943cbcd343aa77991b1f6f
https://juser.fz-juelich.de/record/893153
https://juser.fz-juelich.de/record/893153
Autor:
Nancy Heylen, K. Croes, Rogier Baert, S. Park, Geoffrey Pourtois, Jean-Philippe Soulie, Katia Devriendt, Christopher J. Wilson, Ming Mao, Q-T. Le, V. Blanco, Gayle Murdoch, Herbert Struyf, Anshul Gupta, V. Vega, Lieve Teugels, S. Paolillo, N. Jourdan, Kiroubanand Sankaran, J. Sweerts, Ivan Ciofi, S. Decoster, P. Morin, Els Kesters, Juergen Boemmels, Frederic Lazzarino, Zs. Tokei, Christoph Adelmann, M. H. van der Veen, M. Ercken, Kris Vanstreels, S. Van Elshocht, M. O'Toole, J. Versluijs, M. H. Na, Frank Holsteyns, Houman Zahedmanesh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Interconnect options will be introduced and reviewed targeting tight pitch metal layers at the local levels. Examples include hybrid metallization, semi-damascene interconnects as well as potential new conductor materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b4b449b819b2556b63b50762bf16b9
https://doi.org/10.1109/iedm13553.2020.9371903
https://doi.org/10.1109/iedm13553.2020.9371903
Autor:
Geoffrey Pourtois, Kiroubanand Sankaran, Hao Yu, A. Dabral, Nadine Collaert, Kurt Stokbro, A. de Jamblinne de Meux, Sergiu Clima, Anh Khoa Augustin Lu, Michel Houssa, Marc Schaekers, Naoto Horiguchi, Wim Magnus
Publikováno v:
ECS journal of solid state science and technology
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9efec3aa715277d97d312dd67e08009b
https://doi.org/10.1149/2.0041806jss
https://doi.org/10.1149/2.0041806jss
Autor:
Siddharth Rao, Gouri Sankar Kar, Kevin Garello, D. Crotti, J. Swerts, Sebastien Couet, Geoffrey Pourtois, Kiroubanand Sankaran, W. Kim, Shreya Kundu, Richard F. L. Evans, R. Carpenter
Publikováno v:
64th IEEE Annual International Electron Devices Meeting (IEDM), DEC 01-05, 2018, San Francisco, CA
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c45801fba830cdad05a8130907422ac
https://doi.org/10.1109/iedm.2018.8614627
https://doi.org/10.1109/iedm.2018.8614627
Autor:
Sofie Mertens, T. Lin, Geoffrey Pourtois, Laurent Souriau, Yoann Tomczak, Johan Swerts, Kiroubanand Sankaran, Arnaud Furnemont, Sven Van Elshocht, Woojin Kim, Sebastien Couet, Diana Tsvetanova, Enlong Liu, Gouri Sankar Kar
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Spin-transfer torque magnetic random access memory (STT-MRAM) is currently explored to challenge the dynamic random access memory and embedded memory applications. Perpendicular magnetic tunnel junction (p-MTJ) stacks used in the STT-MRAM must be com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c1debbaaf8b1d010db5985e8f9c173
https://doi.org/10.1109/tmag.2016.2515109
https://doi.org/10.1109/tmag.2016.2515109
Autor:
Diana Tsvetanova, G. L. Donadio, T. Lin, Sebastien Couet, D. Crotti, Siddharth Rao, Yoann Tomczak, Laurent Souriau, Gouri Sankar Kar, Kiroubanand Sankaran, Johan Swerts, Simon Van Beek, Ludovic Goux, Woojin Kim, Arnaud Furnemont
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Low write error rate (WER) is an important requirement for spin-transfer torque magnetic random access memory to be developed as a product. However, there have been reports about back-hopping phenomena that disturb achieving low WER. We demonstrate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a11c447fbabe4e5957767d756642910
https://doi.org/10.1109/tmag.2016.2536158
https://doi.org/10.1109/tmag.2016.2536158
Autor:
Jean-Philippe Soulie, Christoph Adelmann, Wilfried Vandervorst, Marleen H. van der Veen, Valeria Founta, Zsolt Tokei, Geoffrey Pourtois, Christopher J. Wilson, Anshul Gupta, Ingrid De Wolf, Shreya Kundu, N. Jourdan, Marco Siniscalchi, Ivan Ciofi, Johan Swerts, Ming Mao, Shibesh Dutta, Kiroubanand Sankaran
Publikováno v:
ECS Meeting Abstracts. :1293-1293
In recent technology nodes, interconnect scaling has become a major bottleneck for the reduction of the area of CMOS circuits. In the near future, interconnect dimensions will reach 10 nm and below. Reducing the cross-sectional area of interconnect w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::842e3a35c8bc34979720ffc3b81db110
https://doi.org/10.1149/ma2020-01221293mtgabs
https://doi.org/10.1149/ma2020-01221293mtgabs