Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Kirill D. Shcherbachev"'
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 1, Pp 43-50 (2022)
ZnO single crystals are used for the fabrication of laser targets for high-energy electron irradiated UV laser cathode-ray tubes and homoepitaxial substrates for lasers. The technology of ZnO based UV LEDs imposes strict requirements to surface quali
Externí odkaz:
https://doaj.org/article/59c9f25a907c423fb965c03d468f172c
Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis
Autor:
Vladimir T. Bublik, Marina I. Voronova, Kirill D. Shcherbachev, Mikhail V. Mezhennyi, Vladimir Ya. Reznik
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 3, Pp 133-139 (2019)
Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Internal or intrinsic gettering is an effective way to reduce the contamination in
Externí odkaz:
https://doaj.org/article/de20dddca935401ca7dfee10f5984024
Publikováno v:
Modern Electronic Materials, Vol 4, Iss 4, Pp 125-134 (2018)
The capabilities of X-ray diffuse scattering (XRDS) method for the study of microdefects in semiconductor crystals have been overviewed. Analysis of the results has shown that the XRDS method is a highly sensitive and information valuable tool for st
Externí odkaz:
https://doaj.org/article/c5e5bd053f4b4bca855274576c41dd96
Autor:
Ksenia B. Eidelman, Nataliya Yu. Tabachkova, Kirill D. Shcherbachev, Yuri N. Parkhomenko, Vladimir V. Privesentsev, Denis M. Migunov
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 3, Pp 104-109 (2017)
This work deals with the study of structural transformations in the near-surface layers of silicon after ion beam synthesis of zinc-containing nanoparticles. Phase formation after implantation of Zn+ ions and two-stage implantation of O+ and Zn+ ions
Externí odkaz:
https://doaj.org/article/219f920d8bf148f4969cc4a22f3ba489
Autor:
Tatiana S. Argunova, Mikhail Yu. Gutkin, Kirill D. Shcherbachev, Olga P. Kazarova, Evgeniy N. Mokhov, Jung Ho Je
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 16, Iss 6, Pp 1038-1047 (2016)
By the use of high-resolution X-ray diffractometry and synchrotron radiation topography, the distribution of dislocations in AlN crystals grown on evaporating SiC substrates is studied. The growth of AlN layer in one process with the evaporation of S
Externí odkaz:
https://doaj.org/article/f9e2c747422b463682977b536d64ef98
Autor:
Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Alexander E. Kalmykov, Olga P. Kazarova, Evgeniy N. Mokhov, Kristina N. Mikaelyan, Alexander V. Myasoedov, Lev M. Sorokin, Kirill D. Shcherbachev
Publikováno v:
Crystals, Vol 7, Iss 6, p 163 (2017)
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective.
Externí odkaz:
https://doaj.org/article/a1b85bf43fe349259e80f98fb313d9d1
Autor:
Kirill D. Shcherbachev, A. N. Palagushkin, Vladimir Privezentsev, N. Yu. Tabachkova, E. V. Khramov
Publikováno v:
Journal of Electronic Materials. 49:7343-7348
Due to their tunable current–voltage characteristics, Zn-doped thin SiO2 films are promising for microelectronic devices, e.g., memristors. In this work we studied single-crystal Si (100) substrates with 200 nm SiO2 surface layers implanted with 64
Autor:
V. S. Kulikauskas, Vladimir Privezentsev, O. S. Zilova, Kirill D. Shcherbachev, N. Yu. Tabachkova, A. A. Burmistrov, K. B. Eidelman, V.A. Skuratov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:56-59
The single crystal CZ n-Si(1 0 0) substrates were implanted by 64Zn+ ions with a fluence of 5 × 1016/cm2 and energy of 50 keV to form Zn nanoparticle (NP). During implantation, the Si substrate the temperature was constant at about 350 °C. After th
Autor:
N. S. Kozlova, Kirill D. Shcherbachev, M. I. Voronova, Elena A. Skryleva, O. A. Buzanov, Anna P. Kozlova, E. V. Zabelina
Publikováno v:
Optical Materials. 91:482-487
We performed a comprehensive study of the properties of La3Ga5.5Ta0·5O14 crystals grown in different atmospheres before and after the post-growth treatments (annealing in air and vacuum) using different methods to clarify the origin of defects. The
Autor:
Yu. A. Agafonov, V. V. Zatekin, E. A. Steinman, V. S. Kulikauskas, V. K. Egorov, V. I. Zinenko, A. N. Tereshchenko, Vladimir Privezentsev, Kirill D. Shcherbachev
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:382-386
The surface layer of a SiO2/Si structure implanted with Zn+ and O+ ions and annealed in neutral and inert atmospheres is studied. At first, n-Si(100) silicon plates are oxidized in dry O2 to achieve an oxide-film thickness of 0.2 μm. Then, at room t