Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Kirill A. Lozovoy"'
Autor:
Kirill A. Lozovoy, Vladimir V. Dirko, Olzhas I. Kukenov, Arseniy S. Sokolov, Konstantin V. Krukovskii, Mikhail S. Snegerev, Alexey V. Borisov, Yury V. Kistenev, Andrey P. Kokhanenko
Publikováno v:
C, Vol 10, Iss 2, p 36 (2024)
Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing
Externí odkaz:
https://doaj.org/article/2f36a86bf2c847589375847b43169851
Autor:
Tatiana B. Lepekhina, Viktor V. Nikolaev, Maxim E. Darvin, Hala Zuhayri, Mikhail S. Snegerev, Aleksandr S. Lozhkomoev, Elena I. Senkina, Andrey P. Kokhanenko, Kirill A. Lozovoy, Yury V. Kistenev
Publikováno v:
International Journal of Molecular Sciences, Vol 25, Iss 4, p 2257 (2024)
Bioinert materials such as the zirconium dioxide and aluminum oxide are widely used in surgery and dentistry due to the absence of cytotoxicity of the materials in relation to the surrounding cells of the body. However, little attention has been paid
Externí odkaz:
https://doaj.org/article/1731c3fe3e2b448fac1dbb443c2b1cf4
Autor:
Kirill A. Lozovoy, Rahaf M. H. Douhan, Vladimir V. Dirko, Hazem Deeb, Kristina I. Khomyakova, Olzhas I. Kukenov, Arseniy S. Sokolov, Nataliya Yu. Akimenko, Andrey P. Kokhanenko
Publikováno v:
Nanomaterials, Vol 13, Iss 23, p 3078 (2023)
Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging.
Externí odkaz:
https://doaj.org/article/6ecee8ae5f8340f0a996bb189ad5eb5b
Autor:
Vladimir V. Dirko, Kirill A. Lozovoy, Andrey P. Kokhanenko, Olzhas I. Kukenov, Alexander G. Korotaev, Alexander V. Voitsekhovskii
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 231 (2023)
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7
Externí odkaz:
https://doaj.org/article/1939b59bf47647b096da258831bbb52a
Autor:
Kirill A. Lozovoy, Ihor I. Izhnin, Andrey P. Kokhanenko, Vladimir V. Dirko, Vladimir P. Vinarskiy, Alexander V. Voitsekhovskii, Olena I. Fitsych, Nataliya Yu. Akimenko
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2221 (2022)
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, the
Externí odkaz:
https://doaj.org/article/fc4105905df74e9d81d85084f2c65155
Autor:
Kirill A. Lozovoy, Kristina I. Khomyakova, Andrey P. Kokhanenko, Vladimir V. Dirko, Nataliya Yu. Akimenko, I. I. Izhnin, O. I. Fitsych, Rahaf M. H. Douhan, Alexander V. Voitsekhovskii
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communication systems and quantum cryptography. In the past
Autor:
A. V. Voitsekhovskii, Kirill A. Lozovoy, Vladimir V. Dirko, N. Yu. Akimenko, A. P. Kokhanenko
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer–Weber mechanism in this system is proposed. The dependences of the aver
Autor:
Andrey P. Kokhanenko, Kurban R. Kurbanov, I. I. Izhnin, Alexander V. Voitsekhovskii, Kirill A. Lozovoy, Vladimir V. Dirko
Publikováno v:
Applied Nanoscience. 10:4375-4383
Experimental fabrication and investigation of unique properties of two-dimensional monoatomic layers of carbon, silicon, germanium, and tin on different surfaces have opened bright perspectives for development of devices of new generation. Wide oppor
Publikováno v:
Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed systems by the reflection high-energy electron dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e92efa2a971a3e1ea1d10d77920c668
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000926716
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000926716
Autor:
Kirill A. Lozovoy, Vladimir V. Dirko, Alexander V. Voitsekhovskii, Andrey P. Kokhanenko, Nataliya Yu. Akimenko
Publikováno v:
Crystal Growth & Design. 19:7015-7021
Germanium/silicon systems are among the most promising materials for development of current semiconductor electronics and photonics. Structures with germanium quantum dots on silicon are very inter...