Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kirby Maxey"'
Autor:
Kevin P. O’Brien, Carl H. Naylor, Chelsey Dorow, Kirby Maxey, Ashish Verma Penumatcha, Andrey Vyatskikh, Ting Zhong, Ande Kitamura, Sudarat Lee, Carly Rogan, Wouter Mortelmans, Mahmut Sami Kavrik, Rachel Steinhardt, Pratyush Buragohain, Sourav Dutta, Tristan Tronic, Scott Clendenning, Paul Fischer, Ernisse S. Putna, Marko Radosavljevic, Matt Metz, Uygar Avci
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-5 (2023)
The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent
Externí odkaz:
https://doaj.org/article/f96e8d19735141ee83b9271a47ca8847
Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an