Zobrazeno 1 - 10
of 1 777
pro vyhledávání: '"Kirby, K."'
Autor:
Sood, Aditya, Sievers, Charles, Shin, Yong Cheol, Chen, Victoria, Chen, Shunda, Smithe, Kirby K. H., Chatterjee, Sukti, Donadio, Davide, Goodson, Kenneth E., Pop, Eric
Publikováno v:
ACS Nano (2021)
Layering two-dimensional van der Waals materials provides unprecedented control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. Here, using spatially-resolved ultrafast thermoreflec
Externí odkaz:
http://arxiv.org/abs/2107.10838
Autor:
Suryavanshi, Saurabh V., Magyari-Kope, Blanka, Lim, Paul, McClellan, Connor, Smithe, Kirby K. H., English, Chris D., Pop, Eric
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates unique current
Externí odkaz:
http://arxiv.org/abs/2105.10792
Publikováno v:
ACS Nano 15, 1587-1596 (2021)
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional sem
Externí odkaz:
http://arxiv.org/abs/2012.15350
Autor:
Yalon, Eilam, Aslan, Özgür Burak, Smithe, Kirby K. H., McClellan, Connor J., Suryavanshi, Saurabh V., Xiong, Feng, Sood, Aditya, Neumann, Christopher M., Xu, Xiaoqing, Goodson, Kenneth E., Heinz, Tony F., Pop, Eric
Publikováno v:
ACS Applied Materials & Interfaces (2017)
The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with
Externí odkaz:
http://arxiv.org/abs/1710.07650
Autor:
Lo, Chun-Li, Catalano, Massimo, Smithe, Kirby K. H., Wang, Luhua, Zhang, Shengjiao, Pop, Eric, Kim, Moon J., Chen, Zhihong
Copper interconnects in modern integrated circuits require ultra-thin barriers to prevent intermixing of Cu with surrounding dielectric materials. Conventional barriers rely on metals like TaN, however their finite thickness reduces the cross-section
Externí odkaz:
http://arxiv.org/abs/1706.10178
Autor:
Yalon, Eilam, McClellan, Connor J., Smithe, Kirby K. H., Rojo, Miguel Muñoz, Runjie, Xu, Suryavanshi, Saurabh V., Gabourie, Alex J., Neumann, Christopher M., Xiong, Feng, Farimani, Amir B., Pop, Eric
Publikováno v:
Nano Letters (2017)
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multi-layered p
Externí odkaz:
http://arxiv.org/abs/1704.08270
Publikováno v:
2D Materials (Dec 2016)
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer len
Externí odkaz:
http://arxiv.org/abs/1608.00987
Autor:
Kirby, K., Liddiard, C., Pocock, L., Black, S., Diaper, A., Goodwin, L., Mensah, T., Proctor, A., Richards, G., Taylor, H., Voss, S., Benger, J.
Publikováno v:
Progress in Palliative Care; Jun2024, Vol. 32 Issue 3, p189-196, 8p
Autor:
Kirby, K., Shaaban, A., Walton, A., Kennedy, D., Williams, A.J., Brooks, O.P., Sheridan, R.S., Harris, I.R.
Publikováno v:
In Journal of Magnetism and Magnetic Materials 1 November 2020 513