Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Kiran Kumar Kovi"'
Autor:
Jiahang Shao, Mitchell Schneider, Gongxiaohui Chen, Tanvi Nikhar, Kiran Kumar Kovi, Linda Spentzouris, Eric Wisniewski, John Power, Manoel Conde, Wanming Liu, Sergey V. Baryshev
Publikováno v:
Physical Review Accelerators and Beams, Vol 22, Iss 12, p 123402 (2019)
Planar nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] has emerged as a unique field emission source attractive for accelerator applications because of its capability to generate a high charge beam and handle moderate vacuum conditions.
Externí odkaz:
https://doaj.org/article/8c236f6d28fd4b679c61b223c53aace9
Publikováno v:
Emergent Materials. 4:525-530
Autor:
Anirudha V. Sumant, Ralu Divan, Rana Alkhaldi, Luis Balicas, Saikat Talapatra, Kiran Kumar Kovi, Bhaswar Chakrabarti, Lincoln Weber, Daniel Rhodes, Daniel Rosenmann, Prasanna Patil, Jawnaye Nash, Nihar R. Pradhan, Milinda Wasala
Publikováno v:
Journal of Materials Chemistry C. 9:12168-12176
A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoco
Autor:
Kiran Kumar Kovi, Ian Friel, Saman Majdi, Daniel J. Twitchen, Jan Isberg, Viktor Djurberg, Markus Gabrysch, Nattakarn Suntornwipat
Publikováno v:
Nano Letters
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of long-lived valle
Autor:
Anirudha V. Sumant, Chunguang Jing, Kiran Kumar Kovi, Manoel Conde, Jiahang Shao, Linda Spentzouris, John Power, Sergey Antipov, Gwanghui Ha, Eric Wisniewski, Wanming Liu, Gongxiaohui Chen, Edgar Gomez
Publikováno v:
Applied Physics Letters. 117:171903
Quantum efficiency (QE), intrinsic emittance, and robustness are the three most important figures of merit for photocathodes, the first two determine the ultimate achievable brightness of an electron beam, and the third one directly correlates with t
Publikováno v:
Surface Science Spectra. 27:026601
Results of UV-vis spectroscopy (spectrophotometry) of highly conductive submicrometer nitrogen-incorporated ultrananocrystalline diamond, (N)UNCD, processed in technologically important oxygen and hydrogen plasmas are presented for the spectral range
Autor:
Gongxiaohui Chen, Kiran Kumar Kovi, Sergey Antipov, Gowri Adhikari, Andreas Schroeder, Linda Spentzouris, Sergey V. Baryshev
Publikováno v:
2018 IEEE International Conference on Plasma Science (ICOPS).
There is a strong motivation to develop and understand novel materials with the potential to be utilized as photocathodes, as these could have desirable photoemission properties for research and industrial applications. Nitrogen-incorporated ultranan
Autor:
Kiran Kumar Kovi, Linda Spentzouris, Chunguang Jing, Gongxiaohui Chen, Sergey V. Baryshev, Gowri Adhikari, Sergey Antipov, W. Andreas Schroeder
Nitrogen incorporated ultrananocrystalline diamond ((N)UNCD) could be an enabling material platform for photocathode applications due to its high emissivity. While the quantum efficiency (QE) of UNCD was reported by many groups, no experimental measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d1a161f2db274704cd195710f389dc6
Publikováno v:
ECS Transactions. 69:61-65
Single-crystalline CVD diamond films have excellent electrical and material properties with potential applications in high power, high voltage and high frequency applications that are out of reach for conventional semiconductor materials. For realiza
Publikováno v:
Diamond and Related Materials. 58:185-189
Etching of diamond is one of the most important process steps to realize diamond based devices. Isotropic etching in diamond yielding a high etch rate is challenging owing to its material properties. In the current study, single-crystalline diamond i