Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Kiran Chatty"'
Publikováno v:
Key Engineering Materials. 945:67-70
We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at VDS=400V and VGS=15V and a low specific on-resistance (RON,SP) of 2.1 mΩ.cm2 at VGS=15V designed for xEV traction inverter a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc5b7cc512e4771f78a455e06c51525
https://doi.org/10.4028/p-6yitf5
https://doi.org/10.4028/p-6yitf5
Publikováno v:
Materials Science Forum. 963:792-796
This paper presents the comparative study on the repetitive unclamped inductive load switching capabilites in comercialized 1200V, 160mΩ rated SiC MOSFETs. Recently released Littelfuse-Monolith 1200V 160 mOhm design (LSIC1MO120E0160) manufactured th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5116f350d2a66671145b4f00d98b89e5
https://doi.org/10.4028/www.scientific.net/msf.963.792
https://doi.org/10.4028/www.scientific.net/msf.963.792
Publikováno v:
Materials Science Forum. 858:803-806
An advanced silicon carbide power MOSFET process was developed and implemented on a high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm silicon production line were demonstrated with blocking voltage of 1700V with VG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4943ac9bead2a645155c358d05ff7c6
https://doi.org/10.4028/www.scientific.net/msf.858.803
https://doi.org/10.4028/www.scientific.net/msf.858.803
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper introduces an In-Circuit Reliability Test System (ICRTS) for SiC MOSFETs and diodes that can test a large number of high-voltage devices by emulating real life voltage and current stress to get statistical endurance test results. One chall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b81393743e3869a5cb1ce7cdde3f1eaa
https://doi.org/10.1109/apec.2017.7931018
https://doi.org/10.1109/apec.2017.7931018
Publikováno v:
Materials Science Forum. :903-906
We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39017fb32d49f6d36cacfc95fc0b72c7
https://doi.org/10.4028/www.scientific.net/msf.778-780.903
https://doi.org/10.4028/www.scientific.net/msf.778-780.903
Publikováno v:
Materials Science Forum. :915-920
We report a 900V 4H-SiC depletion mode (DM) VJFET with a specific on-resistance (RDSON,SP) of 1.46mOhm-cm2 at VGS=2.5V, IDS=10A. The RDSON,SP of the DM VJFET, designed for 600V-800V applications, is one of the lowest reported for a VJFET and is an or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160a16e28ae8331eb0a889e07d179b1f
https://doi.org/10.4028/www.scientific.net/msf.740-742.915
https://doi.org/10.4028/www.scientific.net/msf.740-742.915
Publikováno v:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
650V and 900V, 150A SiC Schottky diodes have been manufactured on 150mm SiC wafers using a high yielding Schottky diode process developed in an automotive qualified Si foundry. The 900V diodes have a forward voltage drop of 1.65V at 150A, a breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5ab113c8e15f7ee82bb7895cbc0296
https://doi.org/10.1109/wipda.2016.7799926
https://doi.org/10.1109/wipda.2016.7799926
Autor:
Blake Powell, D. Gutierrez, C. Hundley, Kiran Chatty, Sujit Banerjee, Kevin Matocha, J. Nowak
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Design and manufacturing process for high-voltage SiC MOSFETs have been developed in a 150mm CMOS fab. 1.2KV MOSFETs have been fabricated on this production line running in parallel with CMOS wafers. Typical devices have state-of-the-art performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4baaf8fc5a088418ffcdeb9e4bd08fba
https://doi.org/10.1109/ispsd.2016.7520832
https://doi.org/10.1109/ispsd.2016.7520832
Autor:
Franco Stellari, Peilin Song, Moyra K. McManus, Robert Gauthier, Alan J. Weger, Kiran Chatty, Mujahid Muhammad, Pia Sanda
Publikováno v:
EDFA Technical Articles. 6:20-30
Latchup has long been a concern for CMOS technologies and is becoming more of an issue with the reduction of transistor dimensions and spacing. Although many techniques for avoiding the risk of latchup have been developed, they generally apply to spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ae5dfdbeaf2760092be27f0fc769beb
https://doi.org/10.31399/asm.edfa.2004-3.p020
https://doi.org/10.31399/asm.edfa.2004-3.p020
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f179ba3ae6c4fd52be67d45b046c4ab2
https://doi.org/10.1109/ispsd.2012.6229102
https://doi.org/10.1109/ispsd.2012.6229102