Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kira L. Enisherlova"'
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 2, Pp 63-71 (2021)
The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional he
Externí odkaz:
https://doaj.org/article/69a7427afc664f4f8b01da72c984ae42
Autor:
Andrey N. Aleshin, Kira L. Enisherlova
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 2, Pp 77-85 (2019)
The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered. We have analyzed the regularities of silicon deformation, impurity distribution and
Externí odkaz:
https://doaj.org/article/ac6022ed21c04377b8019ad235b01807
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 1, Pp 50-56 (2017)
We have analyzed the effect of volume and surface defects in SiC substrates on the structure and electrophysical parameters of AlGaN/GaN epitaxial heterostructures grown on them. Regions with internal stresses usually induced by carbon rich disk-shap
Externí odkaz:
https://doaj.org/article/dbe241af6b054403881eb0fed8888b3d
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 131-137 (2016)
MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the spec
Externí odkaz:
https://doaj.org/article/3506fef9bf724bfa98f214b73f14ab3c
Autor:
Kira L. Enisherlova, Andrey N. Aleshin
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 2, Pp 77-85 (2019)
Modern Electronic Materials 5(2): 77-85
Modern Electronic Materials 5(2): 77-85
The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered. We have analyzed the regularities of silicon deformation, impurity distribution and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d492e183b8f0690c1405423c59a28121
https://moem.pensoft.net/article/51365/
https://moem.pensoft.net/article/51365/
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 131-137 (2016)
MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19b9c10feedefe125c4bd23050c7cb80
http://www.sciencedirect.com/science/article/pii/S2452177916300925
http://www.sciencedirect.com/science/article/pii/S2452177916300925
Publikováno v:
SPIE Proceedings.
Complex investigations of the epitaxial layers quality in AlxGa(1-x)N/GaN heterostructures grown on sapphire substrates by MBE and MOCVD methods were carried out with using of Double Crystal Diffractometry and optical microscope methods. The mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca509d2c713381b4cfbd1d545dca31fb
https://doi.org/10.1117/12.802481
https://doi.org/10.1117/12.802481
Autor:
Yuri I. Zavadskii, Kira L. Enisherlova, Konstantin A. Zinis, Vladimir V. Chernokozhin, Irina A. Pelezneva
Publikováno v:
SPIE Proceedings.
It is shown that it is not correct to consider that high quantum efficiency in extrinsic multielement photodetectors can be reached only in the so-called transverse design of a photosensitive element (PSE), which is complex and not technological. A l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8556df55ed93256d78b81df0d7b8a1
https://doi.org/10.1117/12.238212
https://doi.org/10.1117/12.238212
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