Zobrazeno 1 - 10
of 380
pro vyhledávání: '"Kioseoglou G"'
Autor:
Kourmoulakis, G., Michail, A., Paradisanos, I., Marie, X., Glazov, M. M., Jorissen, B., Covaci, L., Stratakis, E., Papagelis, K., Parthenios, J., Kioseoglou, G.
We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission
Externí odkaz:
http://arxiv.org/abs/2307.12663
Autor:
Katsipoulaki, E., Vailakis, G., Demeridou, I., Karfaridis, D., Patsalas, P., Watanabe, K., Taniguchi, T., Paradisanos, I., Kopidakis, G., Kioseoglou, G., Stratakis, E.
Publikováno v:
2D Materials, 10, 045008 (2023)
Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and
Externí odkaz:
http://arxiv.org/abs/2305.06756
Autor:
Maragkakis, G. M., Psilodimitrakopoulos, S., Mouchliadis, L., Sarkar, A. S., Lemonis, A., Kioseoglou, G., Stratakis, E.
Two-dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials that are lately attracting significant interest, given their remarkable properties, such as in-plane anisotropic optical and electronic res
Externí odkaz:
http://arxiv.org/abs/2112.04853
Autor:
Psilodimitrakopoulos, S., Orekhov, A., Mouchliadis, L., Jannis, D., Maragkakis, G. M., Kourmoulakis, G., Gauquelin, N., Kioseoglou, G., Verbeeck, J., Stratakis, E.
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two mono
Externí odkaz:
http://arxiv.org/abs/2104.05783
Autor:
Orekhov, A., Jannis, D., Gauquelin, N., Guzzinati, G., Mehta, A. Nalin, Psilodimitrakopoulos, S., Mouchliadis, L., Sahoo, P. K., Paradisanos, I., Ferrari, A. C., Kioseoglou, G., Stratakis, E., Verbeeck, J.
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropi
Externí odkaz:
http://arxiv.org/abs/2011.01875
Autor:
Paradisanos, I., Germanis, S., Pelekanos, N. T., Fotakis, C., Kymakis, E., Kioseoglou, G., Stratakis, E.
Publikováno v:
Applied Physics Letters 110, 193102 (2017)
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead t
Externí odkaz:
http://arxiv.org/abs/1705.02943
Autor:
Paradisanos, I., Pliatsikas, N., Patsalas, P., Fotakis, C., Kymakis, E., Kioseoglou, G., Stratakis, E.
Publikováno v:
Nanoscale, 2016
Monolayers of Transition Metal Dichalcogenides (TMDs) are atomically thin two-dimensional crystals with attractive optoelectronic properties, which are promising for emerging applications in nanophotonics. Here, we report on the extraordinary spatial
Externí odkaz:
http://arxiv.org/abs/1603.07923
Publikováno v:
Applied Physics Letters 106, 201907 (2015)
A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an e
Externí odkaz:
http://arxiv.org/abs/1602.01748
Publikováno v:
Appl. Phys. Lett. 105, 041108 (2014)
The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on silicon oxide is studied. Optical, Field Emission Scanning Electron Microscopy (FESEM) and Raman microscopies were used to quantify the damage. The intensity of A1g and E2g1
Externí odkaz:
http://arxiv.org/abs/1501.02929
Publikováno v:
Solid State Communications 203 (2015) 16-20
Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental
Externí odkaz:
http://arxiv.org/abs/1412.2156