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pro vyhledávání: '"Kinzer, D."'
Autor:
Amano, H., Baines, Y., Borga, M., Bouchet, T., Chalker, P.R., Charles, M., Chen, K.J., Chowdhury, N., Chu, R., De Santi, C., De Souza, M.M., Decoutere, S., Di Cioccio, L., Eckardt, B., Egawa, T., Fay, P., Freedsman, J.J., Guido, L., Häberlen, O., Haynes, G., Heckel, T., Hemakumara, D., Houston, P., Hu, J., Hua, M., Huang, Q., Huang, A., Jiang, S., Kawai, H., Kinzer, D., Kuball, M., Kumar, A., Lee, K.B., Li, X., Marcon, D., März, M., McCarthy, R., Meneghesso, G., Meneghini, M., Morvan, E., Nakajima, A., Narayanan, E.M.S
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::7d60632cc8f97f053d83a097afdcaf68
https://eprints.whiterose.ac.uk/129453/1/Amano_2018_J._Phys._D%3A_Appl._Phys._51_163001.pdf
https://eprints.whiterose.ac.uk/129453/1/Amano_2018_J._Phys._D%3A_Appl._Phys._51_163001.pdf
Akademický článek
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Publikováno v:
2008 10th Electronics Packaging Technology Conference; 2008, p1-11, 11p
Publikováno v:
2007 Power Conversion Conference - Nagoya; 2007, p360-367, 8p
Autor:
Kinzer, D.
Publikováno v:
Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits & Technology, 2004; 2004, p164-167, 4p
Publikováno v:
Proceedings ISPSD '04. the 16th International Symposium on Power Semiconductor Devices & ICs, 2004; 2004, p405-408, 4p
Autor:
Ling Ma, Amali, A., Kiyawat, S., Mirchandani, A., He, D., Thapar, N., Sodhi, R., Spring, K., Kinzer, D.
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003; 2003, p354-357, 4p
Publikováno v:
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216); 2001, p251-254, 4p
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094); 2000, p373-376, 4p
Publikováno v:
11th International Symposium on Power Semiconductor Devices & ICs ISPSD'99 Proceedings (Cat No99CH36312); 1999, p303-306, 4p