Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Kinya Ashikaga"'
Publikováno v:
Japanese Journal of Applied Physics. 45:7294-7299
The effects on the imprint characteristics of SrBi2Ta2O9 capacitors of various storage conditions were investigated. It was observed that the hysteresis shifts due to imprint degradations were smaller in the case in which the both electrodes of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5186d4bb0c7da0835ae257f858be7d1
https://doi.org/10.1143/jjap.45.7294
https://doi.org/10.1143/jjap.45.7294
Autor:
Ichiro Koiwa, Yoshimi Sato, Kinya Ashikaga, Takashi Ohsumi, Tetsuya Osaka, Hideo Honma, Noritaka Anzai, Akira Hashimoto, Mitsuhiro Watanabe, Makoto Terui, Yasushi Shiraishi, Tomoya Kumagai
Publikováno v:
Journal of Japan Institute of Electronics Packaging. 9:282-288
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac84c7b08242acfffcc87f07acb172f4
https://doi.org/10.5104/jiep.9.282
https://doi.org/10.5104/jiep.9.282
Autor:
Tomoya Kumagai, Makoto Terui, Yoshimi Sato, Ichiro Koiwa, Takashi Ohsumi, Tetsuya Osaka, Noritaka Anzai, Akira Hashimoto, Yasushi Shiraishi, Kinya Ashikaga
Publikováno v:
Journal of Japan Institute of Electronics Packaging. 8:517-522
Recently, there has been a strong demand for smaller electronic devices with improved. About 60% of the area is occupied by the passive components for packaging. To overcome this limitation, an embedded capacitor was prepared using semiconductor tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9e8f5eb285a68aed2495895ba72b52
https://doi.org/10.5104/jiep.8.517
https://doi.org/10.5104/jiep.8.517
Autor:
Toshio Ito, Kinya Ashikaga
Publikováno v:
Journal of Applied Physics. 85:7471-7476
Memory retention characteristics of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field effect transistors (FETs) were investigated in detail using a simple structure, referred to as quasi-MFMIS, in which one electrode of the meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d3dde362e14f18db83717d9e07f2cc
https://doi.org/10.1063/1.369381
https://doi.org/10.1063/1.369381
Publikováno v:
Microelectronic Engineering. 30:207-210
A viable method for the improvement of the polycrystalline diamond X-ray mask membrane is proposed. The use of an ionized cluster beam yields the smoothest surface. Sol-gel planarization film coating with indium tin oxide is the most effective method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e91a65988a8e8956c4ad8b37495c8dd
https://doi.org/10.1016/0167-9317(95)00228-6
https://doi.org/10.1016/0167-9317(95)00228-6
Publikováno v:
Applied Surface Science. :597-601
Improvements in the crystallinity of epitaxial Si1−xGex films have been investigated by treating Si substrates with SiH4 in rapid thermal chemical vapor deposition (RTCVD) to bring this technology close to manufacture. It is found that the epitaxia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a962578490bc91326d50f1d45f65c0
https://doi.org/10.1016/0169-4332(92)90481-c
https://doi.org/10.1016/0169-4332(92)90481-c
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5a9030da9c8b636534f5f60a3e95021
https://doi.org/10.7567/ssdm.1999.lc-1-1
https://doi.org/10.7567/ssdm.1999.lc-1-1
Autor:
Tsutomu Shoki, Shinji Tsuboi, Kinya Ashikaga, Tsuneaki Ohta, Yoichi Yamaguchi, Yoshio Yamashita, Hiroshi Okuyama, Ryo Ohkubo, Hiroshi Hoga
Publikováno v:
SPIE Proceedings.
In this paper, we report on the evaluation of the SiC X-ray mask distortion induced by the backetching receding fabrication process by experiment and simulation. The window-opening process for the backetching mask induced pattern displacements of abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00526347b79f8f4dcb1ca81b1535964e
https://doi.org/10.1117/12.212773
https://doi.org/10.1117/12.212773
Publikováno v:
Photomask and X-Ray Mask Technology.
In this paper we report on the evaluation of the stability of mask materials against SR (synchrotron radiation) irradiation using a SORTEC SR ring. The radiation damage to SiN and SiC mask membranes, a W-based absorber and an SiO 2 antireflective coa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63570c4e8c0707d799295e4c8dd380b0
https://doi.org/10.1117/12.191919
https://doi.org/10.1117/12.191919
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d9f5fedf8a8f4f24015686340c9c2aa
https://doi.org/10.7567/ssdm.1992.s-ii-3
https://doi.org/10.7567/ssdm.1992.s-ii-3