Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kinjiro Kosemura"'
Publikováno v:
Superlattices and Microstructures. 10:493-496
This paper reports on the measurement of the angular distribution of electrons injected through a quantum point contact. We observed double peaks in the distribution with the point contact quantized in two modes. Our calculation of the distribution u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9bf6517cd0875edf2b0eb57fa3a6d9
https://doi.org/10.1016/0749-6036(91)90316-j
https://doi.org/10.1016/0749-6036(91)90316-j
Publikováno v:
The European Conference on Wireless Technology, 2005..
Cost-effective 60 GHz modules were developed for "Digital@Home"-systems which needed the bit rate of several Gbps. The module have the lowest cost local-oscillators which is composed of only two component, a negative-resistance MMIC and /spl sim/3/4/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac39bb78f22dcbfc202243c8798a5e3
https://doi.org/10.1109/ecwt.2005.1617740
https://doi.org/10.1109/ecwt.2005.1617740
Publikováno v:
Applied Physics Letters. 71:353-355
We fabricated a Si single electron tunneling transistor which has a nanoscale floating dot gate stacked on a Coulomb island by a self-aligned process. This device exhibits drain current (Id) oscillations due to the Coulomb blockade effect and quantiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a4400240724def6e0c9d337f5d81df
https://doi.org/10.1063/1.119535
https://doi.org/10.1063/1.119535
Publikováno v:
Applied Physics Letters. 70:1742-1744
We have developed an excellent fabrication method for a Si single-electron field effect transistor memory device having a self-aligned floating dot gate. This device demonstrates single electron memory operation at room temperature. The ability to pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::971049887cff6104ad0dd8382fe128d4
https://doi.org/10.1063/1.118653
https://doi.org/10.1063/1.118653
Autor:
Yasutake Hirachi, Jiro Hirokawa, Tomoko Hamada, Kinjiro Kosemura, Hiroshi Nakano, Makoto Ando
Publikováno v:
33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).
Cost-effective 60 GHz modules were developed for home-link systems which needed the bit rate of several Gbps. The modules are composed of a packaged MMIC mounted on the printed circuit board and a post-wall planar antenna formed on the backside of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35bf49a747e3b0eb19bfcf5d6d5f37ae
https://doi.org/10.1109/eumc.2003.177623
https://doi.org/10.1109/eumc.2003.177623
Autor:
T. Miyashita, Takeo Nagata, Osamu Ikata, Masami Satoh, Moritoshi Ando, Kinjiro Kosemura, Masahiro Kobayashi
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
We fabricated 2.6 GHz surface acoustic wave (SAW) filters using an electron beam exposure system. The filter consists of an interdigital transducer of aluminum on piezoelectric material (LiTaO3). Since the LiTaO3 density was high, a large number of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6551a9cf36e17cc843aaad72b8c3b85c
https://doi.org/10.1117/12.136021
https://doi.org/10.1117/12.136021
Publikováno v:
Optical/Laser Microlithography III.
A phase-shifting mask enables subhalf-micron optical lithography. We propose a new phase-shifting mask with Si02 phase shifters. Si02 phase shifters on a quartz mask substrate have the advantages of low absorption under deep UV and a lack of multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78ce0c4f69027b378f3665bdfac1bbb
https://doi.org/10.1117/12.20187
https://doi.org/10.1117/12.20187
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2163
We studied experimentally and theoretically in detail a Si single-electron tunneling transistor which has a nanoscale floating dot gate stacked on a Coulomb island by a self-aligned process. At 4.2 K, this device exhibits drain current (Id) oscillati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ddaeaec3648fa7ae6e92514c327b8e4
https://doi.org/10.1116/1.590886
https://doi.org/10.1116/1.590886
Publikováno v:
Japanese Journal of Applied Physics. 30:L1921
We report on the first direct observation of the additivity of the quantized conductance for multiple parallel quantum point contacts. We have studied from 1 to 4 parallel quantum point contacts and find that the total conductance can be written in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c868eaf77c5a78cb2f0eae9443374fc
https://doi.org/10.1143/jjap.30.l1921
https://doi.org/10.1143/jjap.30.l1921
Autor:
Schmidt, Poul Erik, Okada, Makoto, Kinjiro Kosemura, Kinjiro Kosemura, Naoki Yokoyama, Naoki Yokoyama
Publikováno v:
Japanese Journal of Applied Physics; November 1991, Vol. 30 Issue: 11 pL1921-L1921, 1p