Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kinga Kościewicz"'
Publikováno v:
Crystals, Vol 14, Iss 6, p 536 (2024)
For the first time, the Z1 and Z2 defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material,
Externí odkaz:
https://doaj.org/article/db1ccfbe69984dc48928e57f653da9a0
Publikováno v:
Crystals, Vol 14, Iss 6, p 541 (2024)
A change in the growth mode from Stranski–Krastanov one, which is characteristic of MOCVD grown GaN, to the laterally grown BGaN in the Volmer–Weber growth mode is described. This change in growth is evidenced by scanning electron microscopy (SEM
Externí odkaz:
https://doaj.org/article/93bd8e7fa0d4408e80cc9c1d6d73e787
Autor:
Marcin Pisarek, Dimitri Arvanitis, J. Mierczyk, Katarzyna Racka, Jerzy Krupka, Kinga Kościewicz, Krzysztof Grasza, Ryszard Diduszko, B. Surma, Dominika Teklinska, Rafal Jakiela, I.A. Kowalik, Emil Tymicki
Publikováno v:
Journal of Crystal Growth. 377:88-95
The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is investigated. The doping efficiency and, indirectly, the presence of the cerium vapour in the growth atmosph
Autor:
Jerzy Krupka, Emil Tymicki, Ryszard Diduszko, M. Piersa, Katarzyna Racka, Dominika Teklinska, Krzysztof Grasza, P. Skupiński, Rafal Jakiela, Tadeusz Łukasiewicz, Kinga Kościewicz
Publikováno v:
Materials Science Forum. :29-32
In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside
Autor:
Dominika Teklinska, Andrzej Olszyna, Kinga Kościewicz, Grzegorz Kowalski, Wlodek Strupiński, Mateusz Tokarczyk, Krystyna Mazur
Publikováno v:
Materials Science Forum. :95-98
A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2
Autor:
Krzysztof Grasza, Kinga Kościewicz, Ryszard Diduszko, Maciej Gała, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Katarzyna Racka, Emil Tymicki, Rafał Bożek
Publikováno v:
Materials Science Forum. :17-20
In this work we present the growth of 4H-SiC crystals (2 inch in diameter) on the 8° off- axis C-face 6H-SiC seeds, inclined toward [11-20] direction. The growth of crystals by physical vapour transport method (PVT) was realized with the open seed b
Autor:
Jacek M. Baranowski, Rafał Bożek, Jolanta Borysiuk, Andrzej Wysmołek, Aneta Drabińska, Pierre-Antoine Geslin, Krzysztof P. Korona, Piotr Caban, Kacper Grodecki, Roman Stepniewski, Kinga Kościewicz, Wlodek Strupinski
Publikováno v:
Materials Science Forum. :569-572
The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 16000C, the graphene layer is continuous and covers a large area of the substrate. Significant differences in the growth rate could be obse
Autor:
Katarzyna Racka, Michal Kozubal, Marcin Raczkiewicz, Ryszard Diduszko, Mariusz Pawłowski, Jerzy Krupka, Krzysztof Grasza, Emil Tymicki, Rafal Jakiela, M. Piersa, Kinga Kościewicz, Andrzej Brzozowski, Elzbieta Jurkiewicz-Wegner
Publikováno v:
Materials Science Forum. :21-24
Results of vanadium doping in PVT SiC bulk growth by the use of the seeding technique with an open seed backside are shown. Structural and electrical properties of 4H and 6H-SiC:V were investigated by a variety of experimental methods. In the crystal
Autor:
Krzysztof Wieteska, Kinga Kościewicz, Wojciech Wierzchowski, Andrzej Olszyna, Wlodek Strupinski
Publikováno v:
Materials Science Forum. :251-254
The electron backscatter diffraction (EBSD) detector placed inside a commercial scanning electron microscope (SEM) has been used to study of different SiC polytypes. Different growth conditions in chemical vapor deposition (CVD) method were applied t
Publikováno v:
Materials Science Forum. :597-600
Crystallographic quality of the epitaxial layers depends on the process temperature, partial pressures of active components and the surface polarity and also on the crystallographic quality of the subsurface layer resulting from the preparation of th