Zobrazeno 1 - 10
of 71
pro vyhledávání: '"King.-Jien Chui"'
Autor:
Lakshmi Kanta Bera, Navab Singh, Ze Yu Chen, Calvin Chua Hung Ming, King Jien Chui, Ravinder Pal Singh, Yee Ye Sheng, Surasit Chung, K. Michael Han, Ka Ren Chong, Dim Lee Kwong
Publikováno v:
Materials Science Forum. 1062:528-532
Metal-oxide-semiconductor capacitors with single and multi-layer high-K gate dielectrics on Si (0001) face of n-type 4H-SiC substrates have been investigated. Multi-layered nanolaminated gate-stack comprises alternating ultrathin (6nm) Al2O3 and HfO2
Autor:
Huicheng Feng, Gongyue Tang, Xiaowu Zhang, Boon Long Lau, Ming Chinq Jong, King Jien Chui, Jing Lou, Hongying Li, Duc Vinh Le
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Autor:
Hongyu Li, Aaron Chit Siong Lau, Norhanani Jaafar, Rainer Cheow Siong Lee, Calvin Pei Yu Wong, Kuan Eng Johnson Goh, King-Jien Chui
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Masaya Kawano, Xiang-Yu Wang, Qin Ren, Woon-Leng Loh, B. S. S. Chandra Rao, King-Jien Chui, Tsuyoshi Kawagoe, Ichiro Homma
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
HongMiao Ji, King-Jien Chui
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
The 3D stacked DRAM is an essential key module for high-performance computing systems. However, the cost increase due to 3D stacking limits its applications. The current 3D stacking technology requires front-side and backside microbumps, temporary bo
Publikováno v:
Emerging Non-volatile Memory Technologies ISBN: 9789811569104
Resistive random-access memories (RRAM) has garnered much interest in recent decades as a strong candidate to replace conventional memories like NAND flash, SRAM and DRAM. In contrast to the electrical charge changes in flash memories to define memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1507634c11c8074d68b6474c1f9f0b38
https://doi.org/10.1007/978-981-15-6912-8_10
https://doi.org/10.1007/978-981-15-6912-8_10
Autor:
King-Jien Chui, Woon Leng Loh
Publikováno v:
2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
This paper investigate the evolution of wafer warpage at different stages of a Through Si interposer (TSI) process flow, with reference to 2 different types of temporary bonding material. Comparison was done between solvent based and mechanical based
Publikováno v:
2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
Temporary bonding and de-bonding (TBDB) is one key technology in enabling the 2.5D/3D integration of semiconductor devices [1]. In this paper, we first evaluate two TBDB methods using different TBDB mechanism and corresponding adhesive materials, in