Zobrazeno 1 - 4
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pro vyhledávání: '"King Mingchu"'
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
TrenchMOS FET devices fabricated vertically instead of conventional horizontal POWERMOS devices. Conventional failure analysis techniques have shown difficulty in identifying the failing location if the defect happens at the bottom of trench. Differe
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2013, p190-195, 6p
Autor:
King, Mingchu, Hsu, Chun-Keng, Fu, Chiang, Huang, Hsin-Chie, Yang, Shih-Yi, Liu, Yuan-Lung, Hsu, Kuo-chin
Publikováno v:
Proceedings of SPIE; Nov1999, Issue 1, p214-218, 5p
Publikováno v:
Proceedings of SPIE; Nov1997, Issue 1, p158-166, 9p