Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls.

Autor: Grover, Rohit, Hryniewicz, John Vetold, King, Oliver Simon, Van, Vien

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2001, Vol. 19 Issue 5, p1694-1698, 5p