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Publikováno v:
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
A linear and highly efficient Ka-band power amplifier (PA) for the fifth generation mobile network (5G) application is realized on a 0.15-μm Gallium Arsenide (GaAs) D-mode pseudomorphic high electron mobility transistor (p-HEMT) process. A peak powe