Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Kimitaka Shibata"'
Autor:
Zenpei Kawazu, Tetsuya Yagi, Kenichi Ono, Motoko Sasaki, Kimitaka Shibata, Yasuaki Yoshida, Takashi Nishimura
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 125:212-215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75bd5739d39973e98102efe0f70780b
https://doi.org/10.1541/ieejeiss.125.212
https://doi.org/10.1541/ieejeiss.125.212
Publikováno v:
IEEE Journal of Quantum Electronics. 35:1332-1336
The dependence of the leakage current in 1.3-/spl mu/m InGaAsP buried heterostructure (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two-dimensional device simulator and comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::222d29d52d0fba4a414b22a5df846190
https://doi.org/10.1109/3.784593
https://doi.org/10.1109/3.784593
Publikováno v:
IEEE Journal of Quantum Electronics. 34:1257-1262
The threshold current and the characteristic temperature of 1.3-/spl mu/m InGaAsP-InP buried heterostructure (BH) lasers with the p-n-p-n blocking layers have been numerically analyzed using a two-dimensional (2-D) device simulator. The simulation mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5454f8ef145e5aa93ec6caae7ab85571
https://doi.org/10.1109/3.687870
https://doi.org/10.1109/3.687870
Autor:
Tatsuya Kimura, T. Shiba, Yutaka Mihashi, Masayoshi Takemi, Kimitaka Shibata, S. Takamiya, Masao Aiga
Publikováno v:
Journal of Crystal Growth. 180:1-8
Growth behavior of sulfur-doped n-InP around reactive ion-etched (RIE) mesas has been investigated for realization of p-substrate buried heterostructure laser utilizing metalorganic vapor phase epitaxy. It is found that the growth of n-InP layer on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba215ab8c75cc017af847e7c0a4f308
https://doi.org/10.1016/s0022-0248(97)00195-4
https://doi.org/10.1016/s0022-0248(97)00195-4
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:659-665
Strained-layer multiquantum-well distributed-feedback (MQW-DFB) lasers at a wavelength of 1.3 /spl mu/m operating from -40/spl deg/C to 85/spl deg/C without any coolers are demonstrated. Extremely low threshold current of 17 mA at 85/spl deg/C and op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3a149e1f5cd76f394a19717a796cb5
https://doi.org/10.1109/2944.605718
https://doi.org/10.1109/2944.605718
Autor:
S. Takamiya, Yoshihiro Hisa, Yutaka Mihashi, Yasunori Miyazaki, T. Takiguchi, Kimitaka Shibata, Masao Aiga, T. Itagaki, A. Takemoto, Masayoshi Takemi, K. Goto
Publikováno v:
Journal of Crystal Growth. 170:705-709
A tapered thickness profile and a high thickness enhancement ratio of 3.5 in the waveguide which are necessary for a narrow beam have been realized by selective-area metalorganic chemical vapor deposition (MOCVD) growth using a tapered shape twin mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a038b2748e1b95d66084f09b82641639
https://doi.org/10.1016/s0022-0248(96)00597-0
https://doi.org/10.1016/s0022-0248(96)00597-0
Publikováno v:
Solid-State Electronics. 38:551-556
An optoelectronic integrated device composed of six heterojunction phototransistors epitaxially integrated over two buried crescent laser diodes is developed. The integrated device provides internal electro-optical coupling among constituent componen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b73e281c6fcb10740c2fefaad8e30264
https://doi.org/10.1016/0038-1101(94)00135-3
https://doi.org/10.1016/0038-1101(94)00135-3
Publikováno v:
Sensors and Actuators A: Physical. 43:78-84
A light-to-light transducer with detection of brightness difference is developed. The transducer is constructed by integrating vertically and directly six heterojunction phototransistors and two laser diodes. It is shown that the transducer can detec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1ba3efa4061f67aba0c43c7e25f960a
https://doi.org/10.1016/0924-4247(93)00669-u
https://doi.org/10.1016/0924-4247(93)00669-u
Publikováno v:
Sensors and Actuators A: Physical. 40:125-130
A semiconductor light-to-light transducer has been developed by vertical and direct integration of heterojunction phototransistors and a laser diode. The transducer detects an optical signal and emits an intensified optical output. A linear amplifica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63177adc30903be341cd7472ee249105
https://doi.org/10.1016/0924-4247(94)85017-8
https://doi.org/10.1016/0924-4247(94)85017-8
Publikováno v:
Optical Review. 1:213-216
A optoelectronic integrated device in which six heterojunction phototransistors and two laser diodes are vertically and directly integrated is developed to achieve new functions important for optical signal processing and optical computing. It is dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8df9e30fcae5add85b9e6d0680993e57
https://doi.org/10.1007/bf03254866
https://doi.org/10.1007/bf03254866