Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kimiko Mashimo"'
Autor:
H Sato, Seiji Samukawa, Yukito Nakagawa, Etsuo Wani, Kimiko Mashimo, Tsutomu Tsukada, H. Nogami
Publikováno v:
Thin Solid Films. 341:84-90
Plasma characteristics of a M=0 type helicon wave plasma source and an UHF type plasma source were comparatively studied for the purpose of applying in SiO2 etching processes. Helicon wave and UHF type plasma sources were operated at the excitation f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94771dad55d4d3cb08fa48df3bb9b5a4
https://doi.org/10.1016/s0040-6090(98)01525-9
https://doi.org/10.1016/s0040-6090(98)01525-9
Publikováno v:
Plasma Sources Science and Technology. 5:181-186
Etching characteristics in three different modes employing an M = 0 helicon plasma were compared. It was concluded that high selectivity could not be realized in the high source power operation mode in principle. The comparison between the time-modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::585cc8defa1e13dd98108341a72f3080
https://doi.org/10.1088/0963-0252/5/2/010
https://doi.org/10.1088/0963-0252/5/2/010
Publikováno v:
Japanese Journal of Applied Physics. 35:2477
When applying high-density plasma to SiO2etching, the ability to control the degree of dissociation is critical. In this study, two methods for controlling the degree of dissociation were evaluated usingM=0 helicon wave plasma. One method was time-mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76b52b3774139ee368b6d6cb1678df3
https://doi.org/10.1143/jjap.35.2477
https://doi.org/10.1143/jjap.35.2477
Publikováno v:
Japanese Journal of Applied Physics; October 1993, Vol. 32 Issue: 10 p4850-4850, 1p