Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kimihiro Satoh"'
Autor:
Zihui Wang, Yiming Huai, Longqian Hu, Xiaojie Hao, Zhiqiang Wei, Dongha Jung, Bing Yen, Jing Zhang, Kimihiro Satoh, Pengfa Xu, Woojin Kim, Lienchang Wang
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
With traditional embedded memories, such as eFlash and SRAM, facing major challenge of scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies as the preferred technology for both embedded flash and SRAM replacements. Havin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ed6ded252046d05108fca062c23dfb
https://doi.org/10.1109/imw48823.2020.9108144
https://doi.org/10.1109/imw48823.2020.9108144
Autor:
Zihui Wang, Huadong Gan, Yiming Huai, Hongxin Yang, Xiaobin Wang, Roger Klas Malmhall, Yuchen Zhou, Dong Ha Jung, Jing Zhang, Kimihiro Satoh, Xiaojie Hao, Bing K. Yen
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
To develop very high density STT-MRAM, 3D cross-point architecture is desirable, which requires a selector integrated with a pMTJ memory element. We present a two terminal bi-directional threshold switching selector based on doped-HfOx materials and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4977dcea062c4c2c47527263de447eef
https://doi.org/10.1109/iedm.2017.8268513
https://doi.org/10.1109/iedm.2017.8268513
Autor:
Yuchen Zhou, Jing Zhang, Kimihiro Satoh, Xiaobin Wang, Yiming Huai, Dongha Jun, Xiaojie Hao, Zihui Wang, Huadong Gan, Bing K. Yen
Publikováno v:
Spintronics IX.
Fast operation speed, high retention and high reliability are the most attractive features of the spin transfer torque magnetic random access memory (STT-MRAM) based upon perpendicular magnetic tunneling junction (pMTJ). For state-of-the-art pMTJ STT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cdcfa45c80783f88937d2082bafce56
https://doi.org/10.1117/12.2238311
https://doi.org/10.1117/12.2238311
Autor:
Pengfa Xu, Cory Wang, Nirav Pakala, Mahendra Pakala, Jing Zhang, Kimihiro Satoh, Wang Rongjun, Huadong Gan, Zihui Wang, Lin Xue, Xiaojie Hao, Yuchen Zhou, Yiming Huai, Roger Klas Malmhall, Dongha Jung, Bing K. Yen
Publikováno v:
Applied Physics Letters. 112:092402
High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (∼10 nm) with a tunnel magnetoresistance (TMR) ratio ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c7836f6428f5ce6cc946c4b77b5e51
https://doi.org/10.1063/1.5018874
https://doi.org/10.1063/1.5018874
Autor:
Y. Zhou, K. Moon, D. Jung, H. Gan, U. Chandrashekar, Y. Huai, Zihui Wang, J. Zhang, X. Wang, Xiaojie Hao, Kimihiro Satoh, B. K. Yen, E. Abedifard
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
We will present high performance/low-cost spin transfer torque magnetic random access memory (STT-MRAM) solution based upon 64Mb chip data and scalable magnetic tunneling junction (MTJ) BEOL integration scheme at 55 nm process node. This is the first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf8998f52b611c59f1515271a78db79
https://doi.org/10.1109/intmag.2015.7156502
https://doi.org/10.1109/intmag.2015.7156502
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
Traditional spin transfer torque MRAM (STT-MRAM) uses one transistor and one MTJ (1T-1MTJ) architecture, where the transistor provides bi-polar currents to switch the magnetization of the free layer of the MTJ. Due to the limitation of the maximum cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::128b80f3ffc9c965b0bfcfa2081e879c
https://doi.org/10.1109/intmag.2015.7157689
https://doi.org/10.1109/intmag.2015.7157689
Autor:
Yiming Huai, Roger Klas Malmhall, Hongxin Yang, Zihui Wang, Xiaobin Wang, Dong Ha Jung, Xiaojie Hao, Yuchen Zhou, Bing K. Yen, Huadong Gan, Jing Zhang, Kimihiro Satoh
Publikováno v:
SPIN. :1740011
We explore a 3D cross-point spin transfer torque magnetic random access memory (STT-MRAM) array based on the integration of a perpendicular magnetic tunneling junction (pMTJ) with a matching two-terminal selector. The integrated two-terminal device p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4bc9b7e230df9f8c902dd3830bd0956
https://doi.org/10.1142/s2010324717400112
https://doi.org/10.1142/s2010324717400112
Autor:
Jing Zhang, Yiming Huai, Kimihiro Satoh, Xiaojie Hao, Pengfa Xu, Yuchen Zhou, Huadong Gan, Zihui Wang, Xiaobin Wang, Dongha Jung, Bing K. Yen
Publikováno v:
Applied Physics Letters. 110:212404
The performance of the state-of-the-art perpendicular magnetic tunneling junction (pMTJ) device is fundamentally determined by the physics of material “extreme events.” A dynamic mode approach is used to study “extreme events” of stochastic n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2a468c8c12af23b37bee26d99186d4
https://doi.org/10.1063/1.4984213
https://doi.org/10.1063/1.4984213
Autor:
Xiaobin Wang, Zihui Wang, Xiaojie Hao, Huadong Gan, Pengfa Xu, Dongha Jung, Kimihiro Satoh, Yuchen Zhou, Zhang, Jing, Yen, Bing K., Yiming Huai
Publikováno v:
Applied Physics Letters; 5/22/2017, Vol. 110 Issue 21, p1-5, 5p, 1 Chart, 2 Graphs
Autor:
Jing Zhang, Kimihiro Satoh, Roger Klas Malmhall, Yiming Huai, Xiaobin Wang, Huadong Gan, Zihui Wang, Xiaojie Hao, Dongha Jung, Bing K. Yen, Yuchen Zhou
Publikováno v:
Applied Physics Letters. 105:192403
Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cf07cf5208be576819f1e5ba6ce63e
https://doi.org/10.1063/1.4901439
https://doi.org/10.1063/1.4901439