Zobrazeno 1 - 10
of 371
pro vyhledávání: '"Kimihiko Kato"'
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Autor:
Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori
Publikováno v:
IEEE Access, Vol 11, Pp 121567-121573 (2023)
This study investigates the origin of low-frequency (LF) 1/ $f$ noise in Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) under cryogenic operation. The fluctuation of the drain current increased with decreasing temperature
Externí odkaz:
https://doaj.org/article/85ccaad116e34e26a41e0f4a9d4dbb21
Autor:
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 074002 (2024)
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober t
Externí odkaz:
https://doaj.org/article/0dec5a0c307843deb506f838df9417f0
Autor:
Shimpei Nishiyama, Kimihiko Kato, Mizuki Kobayashi, Raisei Mizokuchi, Takahiro Mori, Tetsuo Kodera
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-6 (2022)
Abstract We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the qu
Externí odkaz:
https://doaj.org/article/6612db17f0aa4177a989f37e8cb816bb
Autor:
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows
Externí odkaz:
https://doaj.org/article/f7088c220e734d0da88ca46bb64b8f95
Autor:
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Takahiro Mori, Yukinori Morita, Takashi Matsukawa, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 341-345 (2020)
We have examined impacts of gate insulator (Al2O3 or HfO2) and gate electrode (TiN or W) on electrical performance of ZnSnO/Si bilayer tunneling field-effect transistors (TFETs). It is found from the capacitance-voltage (C-V) characteristics that the
Externí odkaz:
https://doaj.org/article/2fe5badc75f94a6cb017f287af926196
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1201-1208 (2019)
We demonstrate improvement of electrical characteristics of a bilayer tunneling field effect transistor (TFET) composed of an n-type zinc-tin-oxide (ZnSnO) channel with superior thickness uniformity and a p-type Si source. Careful optimization of the
Externí odkaz:
https://doaj.org/article/d83b80c9eeac47c5accf2a833227db36
Autor:
Kimihiko, Kato
Publikováno v:
関西学院大学社会学部紀要. 140:107-122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::e26271a10f08893d7f7d29aecf2070de
http://hdl.handle.net/10236/00030683
http://hdl.handle.net/10236/00030683
Autor:
Stefan Glass, Kimihiko Kato, Lidia Kibkalo, Jean-Michel Hartmann, Shinichi Takagi, Dan Buca, Siegfried Mantl, Zhao Qing-Tai
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1070-1076 (2018)
In this combined experiment and simulation study we investigate a SiGe/Si based gate-normal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is i
Externí odkaz:
https://doaj.org/article/2c5f77c12f4d49d5b34ec919b5b1506d
Autor:
Yoshiki Yasukochi, Jun Sakuma, Ichiro Takeuchi, Kimihiko Kato, Mitsutoshi Oguri, Tetsuo Fujimaki, Hideki Horibe, Yoshiji Yamada
Publikováno v:
Molecular Genetics & Genomic Medicine, Vol 7, Iss 9, Pp n/a-n/a (2019)
Abstract Background Our longitudinal exome‐wide association studies previously detected various genetic determinants of complex disorders using ~26,000 single‐nucleotide polymorphisms (SNPs) that passed quality control and longitudinal medical ex
Externí odkaz:
https://doaj.org/article/db6b88bfa75b4121bc19ea8a26d99204