Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kimihiko Imura"'
Autor:
Anirban Kar, Shivendra Singh Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 415-425 (2024)
Modern System-on-Chip (SoC) architectures necessitate low-voltage (LV) core transistors featuring excellent digital, analog, and radio frequency (RF) properties, as well as thick oxide transistors serving as robust I/O buffers and high-voltage (HV) t
Externí odkaz:
https://doaj.org/article/f45b6ac8e5a44647ae9a64a8e8655ead
Autor:
Shivendra Singh Parihar, Ahtisham Pampori, Praveen Dwivedi, Jun Huang, Weike Wang, Kimihiko Imura, Chenming Hu, Yogesh Singh Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 444-455 (2023)
This paper aims to provide insights into the thermal, analog, and RF attributes, as well as a novel modeling methodology, for the FinFET at the industry standard 5nm CMOS technology node. Thermal characterization shows that for a 165K change in tempe
Externí odkaz:
https://doaj.org/article/b4bf8956ad2e410980e188f2fa43c719
Autor:
Anirban Kar, Shivendra Singh Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan
Publikováno v:
IEEE Transactions on Electron Devices. :1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c2fce8eaac00a1f77d1a3535f849eda
https://doi.org/10.1109/ted.2023.3262613
https://doi.org/10.1109/ted.2023.3262613
Autor:
Yogesh S. Chauhan, Anirban Kar, Shivendra S. Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d131961bff8cb7a015dc2552e7369ca7
https://doi.org/10.1109/edtm55494.2023.10103010
https://doi.org/10.1109/edtm55494.2023.10103010
Autor:
Shivendra Singh Parihar, Girish Pahwa, Jun Z. Huang, Weike Wang, Kimihiko Imura, Chenming Hu, Yogesh Singh Chauhan
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d84fab03fa63b2df62256c330006764
https://doi.org/10.1109/edtm55494.2023.10102942
https://doi.org/10.1109/edtm55494.2023.10102942
Autor:
Kimihiko Imura, Kiyoshi Kawamura
Publikováno v:
Dislocations in Solids ISBN: 9780429070914
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1910615c724cbe8bae802fd4c42af530
https://doi.org/10.1201/9780429070914-82
https://doi.org/10.1201/9780429070914-82
Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2d09271c68f3a921c971d43db68e95
https://doi.org/10.1109/drc55272.2022.9855797
https://doi.org/10.1109/drc55272.2022.9855797
Publikováno v:
IEEE Transactions on Electron Devices. 66:2520-2526
This paper investigates the RF intermodulation characteristics of transistors from a 14-nm RF FinFET technology using experimental measurements, circuit simulation with Berkeley short-channel IGFET model-common multi-gate (BSIM-CMG), and Volterra ser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eeb285d02474b72ef57c373ef5073ed
https://doi.org/10.1109/ted.2019.2912516
https://doi.org/10.1109/ted.2019.2912516
Publikováno v:
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
This paper experimentally extracts the extrinsic and intrinsic thermal noise γ factors in a 14-nm FinFET technology. The intrinsic γ in saturation operation is found to be close to 1 for the minimum L (16nm) transistors, which is surprisingly low c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e65caa9acaafa744f350240f32acab1
https://doi.org/10.1109/sirf51851.2021.9383331
https://doi.org/10.1109/sirf51851.2021.9383331
Comparison of PMOS and NMOS in a 14-nm RF FinFET technology: RF Characteristics and Compact Modeling
Publikováno v:
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
This paper compares RF characteristics and compact modeling of PMOS and NMOS in a 14-nm FinFET technology. DC I-V as well as its higher order derivatives, y-parameters, and two-tone intermodulation are measured and modeled. Similarities and differenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02bbaaa2512f020affa4a8a4ad8929a
https://doi.org/10.1109/sirf46766.2020.9040187
https://doi.org/10.1109/sirf46766.2020.9040187