Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kimberly Intonti"'
Autor:
Kimberly Intonti, Loredana Viscardi, Veruska Lamberti, Amedeo Matteucci, Bruno Micciola, Michele Modestino, Canio Noce
Publikováno v:
Encyclopedia, Vol 4, Iss 2, Pp 630-671 (2024)
The Second Quantum Revolution refers to a contemporary wave of advancements and breakthroughs in the field of quantum physics that extends beyond the early developments of Quantum Mechanics that occurred in the 20th century. One crucial aspect of thi
Externí odkaz:
https://doaj.org/article/40d3f2b4dba74654b4d0065c032835da
Autor:
Aniello Pelella, Kimberly Intonti, Ofelia Durante, Arun Kumar, Loredana Viscardi, Sebastiano De Stefano, Paola Romano, Filippo Giubileo, Hazel Neill, Vilas Patil, Lida Ansari, Brendan Roycroft, Paul K. Hurley, Farzan Gity, Antonio Di Bartolomeo
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-10 (2024)
Abstract Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temper
Externí odkaz:
https://doaj.org/article/4060848b7bd24da094f7067d45036944
Autor:
Arun Kumar, Aniello Pelella, Kimberly Intonti, Loredana Viscardi, Ofelia Durante, Filippo Giubileo, Paola Romano, Hazel Neill, Vilas Patil, Lida Ansari, Paul K. Hurley, Farzan Gity, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabrica
Externí odkaz:
https://doaj.org/article/296d6fa24d304c349bf3e3a969aa0cbd
Autor:
Kimberly Intonti, Enver Faella, Loredana Viscardi, Arun Kumar, Ofelia Durante, Filippo Giubileo, Maurizio Passacantando, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract This study reports the optoelectronic characterization of few‐layer ReSe2field effect transistors at different pressures. The output curves reveal dominant n‐type behavior and a low Schottky barrier at the metal contacts. The transfer cu
Externí odkaz:
https://doaj.org/article/913d673a8c804bcbae39b6440067f8e9
Autor:
Arun Kumar, Loredana Viscardi, Enver Faella, Filippo Giubileo, Kimberly Intonti, Aniello Pelella, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Publikováno v:
Nano Express, Vol 4, Iss 1, p 014001 (2023)
We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The f
Externí odkaz:
https://doaj.org/article/d0a94a808775430884efdaee6f49c720
Autor:
Enver Faella, Kimberly Intonti, Loredana Viscardi, Filippo Giubileo, Arun Kumar, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Publikováno v:
Nanomaterials, Vol 12, Iss 11, p 1886 (2022)
We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe2 nanosheet. We show tha
Externí odkaz:
https://doaj.org/article/b30ffc8a1e434d23b97a81cb157c082e
Autor:
Arun Kumar, Loredana Viscardi, Enver Faella, Filippo Giubileo, Kimberly Intonti, Aniello Pelella, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Publikováno v:
Journal of Materials Science. 58:2689-2699
We report the fabrication, electrical, and optical characterizations of few-layered black phosphorus (BP)-based field-effect transistor (FET). The fabricated device exhibits a p-type transport with hole mobility up to 175 cm2 V−1 s−1 at Vds = 1 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac0f1308469bb56c4b0ace7b357647de
https://doi.org/10.1007/s10853-023-08169-0
https://doi.org/10.1007/s10853-023-08169-0
Autor:
Arun Kumar, Enver Faella, Ofelia Durante, Filippo Giubileo, Aniello Pelella, Loredana Viscardi, Kimberly Intonti, Stephan Sleziona, Marika Schleberger, Antonio Di Bartolomeo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::612497788bda705c02dcdc0ba15afad3
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85153571397
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85153571397
Autor:
Loredana Viscardi, Kimberly Intonti, Arun Kumar, Enver Faella, Aniello Pelella, Filippo Giubileo, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Publikováno v:
physica status solidi (b). :2200537
Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)-based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p-type conduction and hysteresis in the transfer characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82acf7460f0cc3d52899342c50156a33
https://doi.org/10.1002/pssb.202200537
https://doi.org/10.1002/pssb.202200537