Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Kimberly G. Reid"'
Autor:
Kimberly G. Reid, Jeffry A. Kelber, Opeyemi Olanipekun, Ashutosh Rath, Paul M. Voyles, M. Sky Driver, John Beatty
Publikováno v:
Langmuir. 32:2601-2607
The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimutha
Autor:
Carolyn F. H. Gondran, David Gilmer, Sadao Sasaki, Kimberly G. Reid, Sri Samavedam, Dina H. Triyoso, Anthony Dip
Publikováno v:
Thin Solid Films. 517:2712-2718
In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO 2 that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO 2 using sequential exposures of trimethyl-aluminum and ammonia (NH 3 ) in a batch v
Publikováno v:
Journal of The Electrochemical Society. 141:3500-3504
We show that the properties of N 2 O oxynitride grown in a conventional horizontal furnace may vary down the tube. This could be a control issue when this material is used as the tunnel dielectric for electrically erasible programmable read-only memo
Autor:
Rama I. Hegde, B. Maiti, Kimberly G. Reid, Philip J. Tobin, Yoshitaka Okada, Sergio A. Ajuria
Publikováno v:
IEEE Transactions on Electron Devices. 41:1608-1613
Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO/sub 2/ interface. Much lower thermal budget is required for an NO process than for an N/sub 2/O process to produce an oxynitride with
Publikováno v:
Thin Solid Films. 225:59-63
Atomic layer epitaxy (ALE) of GaAs using metal-organic precursors and arsine (AsH3) has been reported by many researchers for the past several years in a limited temperature range and with a high background of carbon doping. Most reactor designs invo
Publikováno v:
ChemInform. 29
Surface and interface roughness of 40-A oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at 800°C have been investigated using atomic force microscopy with power spectral density, and cross-sectional transm
Autor:
Robert J. Hillard, Louison C. Tan, Kimberly G. Reid, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
In this paper a non‐damaging and non‐contaminating method for performing Capacitance‐Voltage (CV) and Current‐Voltage (IV) electrical characterization of advanced gate dielectrics and stack capacitor films is presented. The method uses a cont
Publikováno v:
Journal of The Electrochemical Society. 145:L13-L15
Surface and interface roughness of 40-A oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at 800°C have been investigated using atomic force microscopy with power spectral density, and cross-sectional transm
Autor:
Rama I. Hegde, Kimberly G. Reid, Yoshio Okada, Vidya Kaushik, Sergio A. Ajuria, B. Maiti, Philip J. Tobin
Publikováno v:
IEEE Electron Device Letters. 17:279-281
Reoxidation of an oxynitride gate dielectric grown by NO anneal of thermal oxide has been studied. This process has demonstrated /spl sim/3-5X improvement of Q/sub BD/ of active edge intensive capacitors in comparison to thermal oxide, N/sub 2/O and
Publikováno v:
Applied Physics Letters. 66:2882-2884
Oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at 950 °C have been investigated using x‐ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), and c