Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kim M. Archuleta"'
Autor:
Mark A. Rodriguez, Eric Forrest, Michael P. Marquez, Kim M. Archuleta, Alexander S. Tappan, Michael T. Brumbach, Robert Knepper
Publikováno v:
ACS Applied Materials & Interfaces. 13:1670-1681
Physical vapor deposition of organic explosives enables growth of polycrystalline films with a unique microstructure and morphology compared to the bulk material. This study demonstrates the ability to control crystal orientation and porosity in pent
Autor:
Rochelle Piatt, Kim M. Archuleta
A materials study of high reliability electronics cleaning is presented here. In Phase 1, mixed type substrates underwent a condensed contaminants application to view a worst- case scenario for unremoved flux with cleaning agent residue for parts in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610af0363a3d76ec0ca78a7e5a0eb062
https://doi.org/10.2172/1167670
https://doi.org/10.2172/1167670
Publikováno v:
Applied Surface Science. 252:2432-2444
We investigate evolving surface morphology during focused ion beam bombardment of C and determine its effects on sputter yield over a large range of ion dose (1017–1019 ions/cm2) and incidence angles (Θ = 0–80°). Carbon bombarded by 20 keV Ga+
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1579-1587
We have conducted an extensive study of the evolution of surface morphology of single crystal diamond surfaces during sputtering by 20keV Ga+ and Ga++H2O. We observe the formation of well-ordered ripples on the surface for angles of incidence between
Autor:
Mya Hartley, Kim M. Archuleta
It is required that Di-2-ethylhexyl Sebacate oil, also commonly known as Dioctyl Sebacate oil, be thoroughly removed from certain metals, in this case stainless steel parts with narrow, enclosed spaces. Dioctyl Sebacate oil is a synthetic oil with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2e82b2e90150d01509bcd3bb5c13f0
https://doi.org/10.2172/1096498
https://doi.org/10.2172/1096498
Publikováno v:
MRS Proceedings. 983
Medium energy (30 keV) focused gallium ion beam exposure of silicon results in a compressive in-plane stress with a magnitude as large as 0.4 GPa. Experiments involve uniform irradiation of thin polysilicon microcantilevers (200 micron length) over a