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Autor:
Tae-Young Kim, Kwang-jin Moon, Seok-Ho Kim, Seong-min Son, Geun Young Yeom, Ki-Hyun Hwang, Kim Hoechul, Jin-Nam Kim, Hyung-Jun Jeon, Junhong Min, Hoon-joo Na, Eunsuk Jung
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
The low-temperature wafer bonding has been studied on two types of dielectric material (SiO, SiCN) as final bonding layers. It is important for the wafer bonding technology to obtain the higher interfacial energy between two bonding wafers, and oxyge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15beb870117ad6ad4e606b3c87a692ec
https://doi.org/10.1109/ectc32862.2020.00315
https://doi.org/10.1109/ectc32862.2020.00315
