Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kim Eui Choong"'
Publikováno v:
2011 3rd Asia Symposium on Quality Electronic Design (ASQED).
In low leakage MOS device fabrication, careful pn junction design is critical to control overall device leakage, such as Band-To-Band Tunneling (BTBT) and Gate-Induced Drain Leakage (GIDL) that are always taken into consideration by device designers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f4c1fe87b522ad9779e700607294f2
https://doi.org/10.1109/asqed.2011.6111749
https://doi.org/10.1109/asqed.2011.6111749
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
The work presented here shows a series of engineering runs to improve the AC HCI lifetime for a 0.60 mum NMOS. The conventional method of increasing NLDD energy and reducing NLDD dose did not achieve significant improvement. The study concludes that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddbe9e5291e91340229b5b2edc8404c5
https://doi.org/10.1109/smelec.2008.4770362
https://doi.org/10.1109/smelec.2008.4770362
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics; 2008, p455-457, 3p