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pro vyhledávání: '"Kim Binn"'
Akademický článek
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Akademický článek
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Publikováno v:
ECS Transactions. 67:61-72
The gate driver circuits using the a-Si TFT and oxide TFT are reviewed. Based on the analysis of the failure behavior of a shift register circuit, various schematics designed for enhanced stability are given with the introduction of clamping voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bcb786ada34ee6cca5a4ce797249309
https://doi.org/10.1149/06701.0061ecst
https://doi.org/10.1149/06701.0061ecst
Akademický článek
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Autor:
Chang-Sung Kim, Beomyoung Kim, Gun-Il Im, Kim Binn, Kyoo-Sung Cho, Jung-Chul Park, Jane C. Kim
Publikováno v:
Journal of Periodontal Research. 47:645-654
Park J-C, Kim J.C, Kim B-K, Cho K-S, Im G-I, Kim B-S, Kim C-S. Dose- and time-dependent effects of recombinant human bone morphogenetic protein-2 on the osteogenic and adipogenic potentials of alveolar bone-derived stromal cells. J Periodont Res 2012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a62c9c1b8ae31f60b065c11256d45190
https://doi.org/10.1111/j.1600-0765.2012.01477.x
https://doi.org/10.1111/j.1600-0765.2012.01477.x
Autor:
Jeong-Soo Lee, Soo Young Yoon, Kim Binn, Chang-Dong Kim, Yong-Ho Jang, Seung Chan Choi, Min-Koo Han, Sun-Jae Kim
Publikováno v:
IEEE Transactions on Electron Devices. 58:3012-3017
We proposed and fabricated the shift register embedded with a full-swing level shifter employing the depletion-mode In-Ga-Zn-O thin-film transistors (IGZO TFTs). In the level shifter, two clock signals with 180° out of phase and one start signal wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49721e1849cf2d7f526458b2684ca13
https://doi.org/10.1109/ted.2011.2157926
https://doi.org/10.1109/ted.2011.2157926
Autor:
Kim Binn, Yong-Uk Lee, Chang-Dong Kim, Kwon-Shik Park, Yong Ho Jang, Seung Chan Choi, Min-Koo Han
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1191-1194
We propose and design a new depletion-mode In-Ga-Zn-O thin film transistors shift register by employing node-shared structure. The proposed shift register requires 14 TFTs for 2 stages, while the previous shift registers were consisted of more than 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a444a2002b596eb21a34729efae3c00
https://doi.org/10.1889/1.3621042
https://doi.org/10.1889/1.3621042
Autor:
Kim Binn, Seung-Hee Kuk, Sun-Jae Kim, Soo-Yeon Lee, Soo-Jeong Park, Jang Yeon Kwon, Min-Koo Han
Publikováno v:
IEEE Electron Device Letters. 33:1279-1281
We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-induced hysteresis occurs due to increased subband
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f31db04a106e21dc23831ec14fd3e3
https://doi.org/10.1109/led.2012.2205891
https://doi.org/10.1109/led.2012.2205891
Autor:
Yong Ho Jang, Soo-Yeon Lee, Chang-Dong Kim, Seung-Hee Kuk, Seung Chan Choi, Kim Binn, Min-Koo Han
Publikováno v:
IEEE Electron Device Letters. 32:1092-1094
We proposed and fabricated a new depletion-mode amorphous indium-gallium-zinc-oxide thin-film-transistor (a-IGZO TFT) shift register. Although only one low-voltage-level power signal (VGL) rather than widely used two ones was employed, the depletion-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e83682b7e5412d1950a556f807a2d2
https://doi.org/10.1109/led.2011.2157989
https://doi.org/10.1109/led.2011.2157989
Autor:
Kim Binn, Seung-Hee Kuk, Seung Chan Choi, Yong Ho Jang, Kwon-Shik Park, Chang-Dong Kim, Min-Koo Han
Publikováno v:
IEEE Electron Device Letters. 32:167-169
A new level shifter employing indium-gallium-zinc-oxide thin-film transistor (IGZO TFT) for a display panel was proposed and successfully fabricated. Two clock signals with 180° out of phase and a discharging TFT were employed to obtain a full-swing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc8e81fc1f50274b9d38d6fa8fe3459
https://doi.org/10.1109/led.2010.2093505
https://doi.org/10.1109/led.2010.2093505