Room-temperature ferromagnetism in semimetallic Co-intercalated MoTe2

Autor: Kim, Whan Kyun, Shin, Yong Ha, Kim, Namgun, Lee, Jee Hwan, Cho, Hyun, Lee, Jae‑Hyeok, Nguyen, Minh Chien, Yu, Woo Jong

Publikováno v: In Applied Surface Science 1 November 2024 672

High Electrical Conductance in Magnetic Emission Junction of Fe 3 GeTe 2 /ZnO/Ni Heterostructure via Selective Spin Emission through ZnO Ohmic Barrier.

Autor: Kim WK; Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.; Semiconductor R&D center, Samsung Electronics, Hwaseong, 18448, Republic of Korea., Kim N; Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.; Semiconductor R&D center, Samsung Electronics, Hwaseong, 18448, Republic of Korea., Park MH; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Shin YH; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Cho GY; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Kim G; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Yu WJ; Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Nov 24, pp. e2409822. Date of Electronic Publication: 2024 Nov 24.