Zobrazeno 1 - 10
of 662
pro vyhledávání: '"Kim, Moon J"'
Autor:
Hao, Jinpeng, Zhang, Yongjian, Zhu, Xiangyu, Li, Ning, Dai, Jingjie, Wang, Xitao, Kim, Moon J., Zhang, Hailong
Publikováno v:
In Ceramics International October 2024
Autor:
Wu, Hanlin, Li, Sheng, Wu, Zheng, Wang, Xiqu, Ofenstein, Gareth A., Kwon, Sunah, Kim, Moon J., Chu, Paul C. W., Lv, Bing
Publikováno v:
Crystal Growth & Design 2020
In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known {\alpha}-phase ThCr2Si2-type structure (Z=2), a new polymorphi
Externí odkaz:
http://arxiv.org/abs/2008.09163
Autor:
Qin, Jing-Kai, Liao, Pai-Ying, Si, Mengwei, Gao, Shiyuan, Qiu, Gang, Jian, Jie, Wang, Qingxiao, Zhang, Si-Qi, Huang, Shouyuan, Charnas, Adam, Wang, Yixiu, Kim, Moon J., Wu, Wenzhuo, Xu, Xianfan, Wang, Hai-Yan, Yang, Li, Yap, Yoke Khin, Ye, Peide D.
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few
Externí odkaz:
http://arxiv.org/abs/2001.05539
Autor:
Pang, Chin-Sheng, Hung, Terry Y. T., Khosravi, Ava, Addou, Rafik, Wang, Qingxiao, Kim, Moon J., Wallace, Robert M., Chen, Zhihong
Publikováno v:
Adv. Electron. Mater. 2020, 1901304
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling. However, it
Externí odkaz:
http://arxiv.org/abs/1910.08619
Autor:
Moon, Jiyoung, Alahbakhshi, Masoud, Gharajeh, Abouzar, Kwon, Sunah, Haroldson, Ross, Li, Zhitong, Hawkins, Roberta, Kim, Moon J, Hu, Walter, Zakhidov, Anvar, Gu, Qing
Metal halide perovskites have emerged as promising gain materials for on-chip lasers in photonic integrated circuits (PICs). However, stable continuous wave (CW) lasing behavior under optical pumping at room temperature - a prerequisite for electrica
Externí odkaz:
http://arxiv.org/abs/1909.10097
Autor:
Lo, Chun-Li, Catalano, Massimo, Khosravi, Ava, Ge, Wanying, Ji, Yujin, Zemlyanov, Dmitry Y., Wang, Luhua, Addou, Rafik, Liu, Yuanyue, Wallace, Robert M., Kim, Moon J., Chen, Zhihong
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a signifi
Externí odkaz:
http://arxiv.org/abs/1901.08143
Autor:
Zhang, Yongjian, Bai, Guangzhu, Zhu, Xiangyu, Dai, Jingjie, Wang, Xitao, Wang, Jinguo, Kim, Moon J., Zhang, Hailong
Publikováno v:
In Materials Today Communications March 2023 34
Autor:
Shen, Tingting, Valencia, Daniel, Wang, Qingxiao, Wang, Kuang-Chung, Povolotskyi, Michael, Kim, Moon J., Klimeck, Gerhard, Chen, Zhihong, Appenzeller, Joerg
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electrons drastically increases the electrical resistivity. In this work, we
Externí odkaz:
http://arxiv.org/abs/1810.06772
Autor:
Wang, Luhua, Li, Jianwei, Gao, Liyin, Wang, Xitao, Xu, Ke, Zhang, Hailong, Wang, Jinguo, Kim, Moon J.
Publikováno v:
In Vacuum December 2022 206