Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Kim, Kyoo Ho"'
Publikováno v:
In Current Applied Physics July 2014 14(7):916-921
Publikováno v:
In Materials Chemistry and Physics 2010 124(2):1006-1010
Publikováno v:
In Journal of Physics and Chemistry of Solids 2010 71(12):1702-1706
Autor:
Wibowo, Rachmat Adhi, Kim, Kyoo Ho
Publikováno v:
In Solar Energy Materials and Solar Cells 2009 93(6):941-944
Autor:
Ersan Y. Muslih, Khan Sobayel Bin Rafiq, Mohammad Ismail Hossain, Md. Shahiduzzaman, Mohammad Junaebur Rashid, Tasmiat Rahman, Badrul Munir, Khaled Althubeiti, Hend I. Alkhammash, Huda Abdullah, K. Techato, Md. Akhtaruzzaman, Kim Kyoo Ho
Publikováno v:
Journal of Alloys and Compounds. 900:163457
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5a1d58fb9d654de6647fed620f53bfe
https://doi.org/10.1016/j.jallcom.2021.163457
https://doi.org/10.1016/j.jallcom.2021.163457
Publikováno v:
In Journal of Physics and Chemistry of Solids 2007 68(10):1908-1913
Publikováno v:
In Solar Energy Materials and Solar Cells 2003 75(1):155-162
Autor:
Badrul Munir, Kim Kyoo Ho
Publikováno v:
Applied Mechanics and Materials. :1176-1180
Gallium or sulphur additions in CuInSe2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ed40260c153e5ff949b3f57e09ea303
https://doi.org/10.4028/www.scientific.net/amm.110-116.1176
https://doi.org/10.4028/www.scientific.net/amm.110-116.1176
Publikováno v:
Makara Journal of Technology, Vol 16, Iss 2, Pp 103-108 (2013)
Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e057c53b5387f1e5cfe66c3a547a488
https://doi.org/10.7454/mst.v16i2.1507
https://doi.org/10.7454/mst.v16i2.1507