Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kilim Kim"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4856-4859
Cu(In, Ga)S2 (CIGS) absorbers were prepared using two-step process. Cu-In-Ga precursors were deposited by sputtering method and then were sulfurized by rapid thermal process based on H2S gas. Sulfurization temperature was changed from 470 degrees C t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d54e235ac640a67adcd7d8bc12ecc7
https://doi.org/10.1166/jnn.2016.12193
https://doi.org/10.1166/jnn.2016.12193
Publikováno v:
Science of Advanced Materials. 8:692-695
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b416d1827e9cf005ca2c6cda4d8507f1
https://doi.org/10.1166/sam.2016.2531
https://doi.org/10.1166/sam.2016.2531
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:203-208
In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::921655b816b5580dec62a27c296b525a
https://doi.org/10.4313/jkem.2014.27.4.203
https://doi.org/10.4313/jkem.2014.27.4.203
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
Cu(In, Ga)S2 (CIGS) absorbers were prepared using two-step process. Cu-In-Ga precursors were deposited by sputtering method and then were sulfurized by rapid thermal process based on H2S gas. Sulfurization temperature was changed from 470 degrees C t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2b71612f8066b95f5302a1fb20121286
https://pubmed.ncbi.nlm.nih.gov/27483834
https://pubmed.ncbi.nlm.nih.gov/27483834