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Autor:
Kilige, S., Bartusseck, I., Junige, M., Neumann, V., Reif, J., Wenzel, C., Böttcher, M., Albert, M., Wolf, M.J., Bartha, J.W.
The copper electrochemical deposition (Cu-ECD) filling capability of high aspect ratio through silicon vias (HAR-TSVs) and homogeneity over 300 mm wafers were investigated on a film stack of thermal ALD (thALD) TaxNy barrier with thermal ALD Ru seed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c7f72c30a4cddea7fe2496bd8e562f02
https://publica.fraunhofer.de/handle/publica/257912
https://publica.fraunhofer.de/handle/publica/257912
