The common-anion rule and the role of cation states: Binary versus ternary semiconductors.

Autor: Kilday, D. G., Margaritondo, G., Ciszek, T. F., Deb, S. K.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1988, Vol. 6 Issue 4, p1364-1368, 5p

Initial stages of Schottky barrier formation: Temperature effects.

Autor: Stiles, K., Kahn, A., Kilday, D. G., Margaritondo, G.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1987, Vol. 5 Issue 4, p987-991, 5p

Effects of thin interlayers on Ag/(HgCd)Te interface behavior.

Autor: Davis, G. D., Beck, W. A., Kilday, D. G., McKinley, J. T., Margaritondo, G.

Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1989, Vol. 7 Issue 3, p870-874, 5p

Kinetics of Schottky-Barrier Formation - Au on Low-Temperature GaAs(110)

Autor: Stiles, K., Kahn, A., Kilday, D. G., Margaritondo, G.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::b8767cd626d3698611c7a43a76ed6b74
https://infoscience.epfl.ch/record/89988

High-Resolution Electron-Energy-Loss Study of NH3 Adsorption on Si(111)2x1 at Room-Temperature

Autor: Kilday, D. G., Margaritondo, G., Frankel, D. J., Anderson, J., Lapeyre, G. J.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::4207f73fbc32d4a38f128355ef3d7273
https://infoscience.epfl.ch/record/89977