Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Kil-Sun No"'
Publikováno v:
Korean Journal of Metals and Materials. 51:233-238
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cafc9348024c0af941e38ef91a026536
https://doi.org/10.3365/kjmm.2013.51.3.233
https://doi.org/10.3365/kjmm.2013.51.3.233
Publikováno v:
Korean Journal of Metals and Materials. 50:613-618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8973826ef26c165c4bf30d654dcb620d
https://doi.org/10.3365/kjmm.2012.50.8.613
https://doi.org/10.3365/kjmm.2012.50.8.613
Publikováno v:
ECS Transactions. 35:47-52
The electrical properties of silicon nanocrystals (Si NCs) embedded in silicon-rich silicon nitride (SRSN) films were investigated by fabricating metal-insulator-semiconductor capacitor structures to utilize the Si NCs as charge storage nodes. The Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf02b64010f314c3487904849408a413
https://doi.org/10.1149/1.3647903
https://doi.org/10.1149/1.3647903
Publikováno v:
ECS Transactions. 35:73-76
We studied the effect of in-situ hydrogen annealing on dielectric SiNx films at a low-temperature (150 oC) by Cat-CVD. The in-situ hydrogen annealing was performed without a vacuum breaking. After in-situ annealing, furnace annealing was performed fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::839f7d9c14b6b5537247954aaebec892
https://doi.org/10.1149/1.3647857
https://doi.org/10.1149/1.3647857
Publikováno v:
ECS Transactions. 28:61-64
Since the visible photoluminescence (PL) from porous silicon was reported [1], investigation of light-emission diodes (LEDs) using silicon (Si) quantum dots (QDs) has been investigated. Many researchers have studied luminescence from Si QDs embedded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47db9d23d8f5c33c8d20b293b11a4d6d
https://doi.org/10.1149/1.3367211
https://doi.org/10.1149/1.3367211
Publikováno v:
ECS Transactions. 28:395-399
The dielectric property has great influence on characteristics of bottom-gate nanocrystalline silicon thin film transistor at low process temperature ({less than or equal to} 200°). For improving the quality of the gate dielectric layer, in-situ hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d9f761451d1db595ddfb9682035baf6
https://doi.org/10.1149/1.3375626
https://doi.org/10.1149/1.3375626
Publikováno v:
ECS Meeting Abstracts. :10-10
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad21c852693b814b29f32f6d4785f590
https://doi.org/10.1149/ma2012-02/2/10
https://doi.org/10.1149/ma2012-02/2/10
Publikováno v:
ECS Meeting Abstracts. :53-53
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da6fd6811a2dbf7b7c645e230530df5
https://doi.org/10.1149/ma2012-01/2/53
https://doi.org/10.1149/ma2012-01/2/53
Autor:
Ki-Su Keum, Kyoung-Min Lee, Jae-Dam Hwang, Kil-Sun No, Jung-Hoon Park, Sin-Young Kang, Wan-Shick Hong
Publikováno v:
ECS Meeting Abstracts. :41-41
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a626c91d0f722081e4f869c9b24dfbc
https://doi.org/10.1149/ma2011-02/2/41
https://doi.org/10.1149/ma2011-02/2/41
Publikováno v:
ECS Meeting Abstracts. :62-62
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36c1408154c17a99e23cfbf4d170fe25
https://doi.org/10.1149/ma2011-01/2/62
https://doi.org/10.1149/ma2011-01/2/62