Tradeoff Characteristics Between Resistivity and Reliability for Scaled-Down Cu-Based Interconnects.

Autor: Yokogawa, Shinji¹ shinji.yokogawa@necel.com, Kikuta, Kuniko¹, Tsuchiya, Hideaki¹, Takewaki, Toshiyuki¹, Suzuki, Mieko¹, Toyoshima, Hironori¹, Kakuhara, Yumi¹, Kawahara, Naoyoshi¹, Usami, Tatsuya², Ohto, Koichi², Fujii, Kunihiro², Tsuchiya, Yasuaki², Arita, Koji², Motoyama, Koichi², Tohara, Makoto², Taiji, Toshiji², Kurokawa, Tetsuya³, Sekine, Makoto²

Publikováno v: IEEE Transactions on Electron Devices. Jan2008, Vol. 55 Issue 1, p350-357. 8p.

Electromigration characteristics for Al-Ge-Cu.

Autor: Kikuta, Kuniko, Kikkawa, Takamaro

Publikováno v: Proceedings of SPIE; 11/ 1/1994, Issue 1, p4-12, 9p

Evaluation of CVD/PVD Multilayered Seed for Electrochemical Deposition of Cu-Damascene Interconnects.

Autor: Furuya, Akira, Tagami, Masayoshi, Shiba, Kazutoshi, Kikuta, Kuniko, Hayashi, Yoshihiro

Publikováno v: IEEE Transactions on Electron Devices; May2002, Vol. 49 Issue 5, p733, 6p, 13 Black and White Photographs, 2 Diagrams, 2 Charts, 7 Graphs

3.3次元希釈反強磁性体におけるランダム磁場効果(お茶の水女子大学理学部物理教室,修士論文アブストラクト(1984年度))

Autor: Kikuta, Kuniko

Publikováno v: 物性研究. 44(4):656-656

この論文は国立情報学研究所の電子図書館事業により電子化されました。

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::9ff48b5620031cbcc4fd15954469a740
http://hdl.handle.net/2433/91716

Quarter-Micron Interconnection Technologies for 256-Mbit Dynamic Random Access Memories

Autor: Kikkawa, Takamaro, Kikuta, Kuniko, Tsunenari, Kinji, Ohto, Koichi, Aoki, Hidemitsu, Drynan, John M., Naoki Kasai, Naoki Kasai, Takemitsu Kunio, Takemitsu Kunio

Publikováno v: Japanese Journal of Applied Physics; January 1993, Vol. 32 Issue: 1 p338-338, 1p