Zobrazeno 1 - 10
of 219
pro vyhledávání: '"Kikuo Yamabe"'
Publikováno v:
ACS Omega, Vol 4, Iss 25, Pp 21115-21121 (2019)
Externí odkaz:
https://doaj.org/article/a7249f20a2904bf99a92a870244759d1
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105018-105018-8 (2019)
We have investigated the relationship between the electrical properties and interfacial atomic structure of SiO2/4H-SiC interfaces, prepared by dry and wet thermal oxidation procedures with 4H-SiC (0001) and 4H-SiC (000-1) substrates, using extended
Externí odkaz:
https://doaj.org/article/de6ad5ff3c1c45fe9305fa1e6f0f5f7b
Autor:
Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045002-045002-5 (2019)
We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements. From the observed band-offse
Externí odkaz:
https://doaj.org/article/9441a35f816c496bba3ae1cfcd10cd7f
Publikováno v:
The Journal of Physical Chemistry C. 125:8853-8861
Systematic investigation of dry oxidation of sub-100 nm diameter Si nanopillars (NPs) of various diameters under varying conditions reveals that at 900 °C, the oxidation involves a deep self-limiti...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918a953d9d6ba5683e6384d4d3eb7e4e
https://doi.org/10.1021/acs.jpcc.1c01514
https://doi.org/10.1021/acs.jpcc.1c01514
Publikováno v:
ACS Omega, Vol 4, Iss 25, Pp 21115-21121 (2019)
ACS Omega
ACS Omega
The variance of sub-20 nm devices is a critical issue for large-scale integrated circuits. In this work, uniform sub-20 nm Si nanopillar (NP) arrays with a reduced diameter variance (to ±0.5 nm) and a cylindrical shape, which can be used for vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f86143518e615053a9ad39606c30ff54
https://doaj.org/article/a7249f20a2904bf99a92a870244759d1
https://doaj.org/article/a7249f20a2904bf99a92a870244759d1
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 17:56-60
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd72e4a8d82bafcd6a92c820039bda7
https://doi.org/10.1380/ejssnt.2019.56
https://doi.org/10.1380/ejssnt.2019.56
Publikováno v:
Journal of Materials Science. 54:11117-11126
In this work, we investigate the microstructure and oxidation of Si nanopillars and report that the oxidation at the sidewall of Si pillars is initially retarded (the so-called self-limiting) and eventually stops altogether at a certain size (stoppin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ea0b0d930c96b24f88b95ad3561ee7
https://doi.org/10.1007/s10853-019-03670-x
https://doi.org/10.1007/s10853-019-03670-x
Publikováno v:
Materials Science in Semiconductor Processing. 134:106046
According to the International Roadmap for Devices and Systems, gate-all-around (GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) will become the main devices in integrated circuits over the next few decades. However, both vertic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c2f8246be66c92e0bf2fd6693db910
https://doi.org/10.1016/j.mssp.2021.106046
https://doi.org/10.1016/j.mssp.2021.106046
Publikováno v:
Scripta Materialia. 198:113818
Silicon (Si) nanopillar (NP)-based gate-all-around metal–oxide–semiconductor field-effect transistors (MOSFETs) are considered the primary components of next-generation integrated circuits according to the International Roadmap of Devices and Sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5de92f791b0df13e6a22e8ca216a2226
https://doi.org/10.1016/j.scriptamat.2021.113818
https://doi.org/10.1016/j.scriptamat.2021.113818
Autor:
Kikuo Yamabe, K. Kato, Mitsuhiro Tomita, Riichiro Takaishi, Masamichi Suzuki, Yusuke Higashi, Shohei Ogura, Yasushi Nakasaki, Yuichiro Mitani, Katsuyuki Fukutani, Masuaki Matsumoto
Publikováno v:
Microelectronics Reliability. 70:12-21
Hydrogen migration in a SiO2/Si system is examined in detail by nuclear reaction analysis. Electrical reliability measurements reveal a correlation between hydrogen migration from the cathode interface to the SiO2/Si interface and dynamic degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c325ae0070ade4f66abebe0bb443d242
https://doi.org/10.1016/j.microrel.2017.01.011
https://doi.org/10.1016/j.microrel.2017.01.011