Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kiki Minoglou"'
Autor:
Philippe Soussan, Mehmet Akif Erismis, Kiki Minoglou, Padmakumar Ramachandra Rao, Piet De Moor, Deniz Sabuncuoglu Tezcan, Joeri De Vos, Koen De Munck, W. Zhang
Publikováno v:
ECS Transactions. 35:53-63
In this paper we present a successful integration scheme of a backside illuminated 1024x1024 pixel, 30µm thin, sensor array that is flip chipped on a ROIC die with 10µm diameter Indium micro bumps, where the pixel pitch is 22.5µm. Special attentio
Publikováno v:
Optical and Quantum Electronics. 42:691-698
Design and optimization of back-side illuminated (BSI) CMOS active pixel sensors (APS) using modeling and simulation are presented. To obtain an effective architecture, various device-physics models were developed and CAD simulation tools employed. S
Autor:
Joeri De Vos, Kiki Minoglou, Koen De Munck, W. Zhang, Philippe Soussan, Mehmet Akif Erismis, Padmakumar Ramachandra Rao, D. S. Tezcan, Piet De Moor
Publikováno v:
International Symposium on Microelectronics. 2010:000372-000377
We present a successful integration scheme of a backside illuminated 1024×1024 pixel sensor array, flip chipped on top of a ROIC with 10μm diameter Indium micro bumps, where the pixel pitch is 22.5μm. Backside illumination results, as compared to
Autor:
Piet De Moor, Puneet Srivastava, Chris Van Hoof, Haris Osman, Robert Mertens, Jean-Yves Duboz, Kiki Minoglou, B. Giordanengo, Jean-François Hochedez, Eric Frayssinet, Manojkumar Patel, Joachim John, Pawel E. Malinowski, Fabrice Semond, Hameed Abdul
Publikováno v:
physica status solidi c. 8:2476-2478
We report on the fabrication of integrated AlGaN-on-Si-based ultraviolet photodetectors. Devices were interconnected with dedicated Si-based fanout structures using flip-chip bonding. The interconnects were In solder bumps with a 20 µm pitch. Backsi
Autor:
P. De Moor, Pawel E. Malinowski, Kiki Minoglou, Joachim John, Raya Mertens, Jean-Yves Duboz, Puneet Srivastava, Ali BenMoussa, Fabrice Semond, Eric Frayssinet, C. Van Hoof, B. Giordanengo
Publikováno v:
SPIE Proceedings.
Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si(111) wafers. Different device structures were designed
Autor:
Joff Derluyn, C. Sturdevant, Raya Mertens, Jo Das, P. De Moor, Eric Frayssinet, C. Van Hoof, J.-F. Hochedez, B. Giordanengo, Joachim John, Jean-Yves Duboz, Marianne Germain, Pawel E. Malinowski, Kiki Minoglou, Fabrice Semond
Publikováno v:
Optical Sensing and Detection.
We report on the fabrication and characterization of solar blind Metal-Semiconductor-Metal (MSM) based photodetectors for use in the extreme ultraviolet (EUV) wavelength range. The devices were fabricated in the AlGaN-on- Si material system, with Alu
Autor:
R. Padmakumar, I. F. Veltroni, C. Van Hoof, D. S. Tezcan, Jan Bogaerts, P. De Moor, Kiki Minoglou, K. De Munck
Publikováno v:
SPIE Proceedings.
Two types of backside illuminated CMOS Active Pixel Detectors--optimized for space-borne imaging--have been successfully developed: monolithic and hybrid. The monolithic device is made out of CMOS imager wafers postprocessed to enable backside illumi
Autor:
Kiki Minoglou, Stephan M. Birkmann, Patrick Merken, Jutta Stegmaier, Paolo Fiorini, Tim Souverijns, Piet De Moor, Jan Putzeys, Ulrich Groezinger, Oliver Krause, Chris Van Hoof, Koen De Munck, Deniz Sabuncuoglu Tezcan
We report first results of laboratory tests of Si:As blocked-impurity-band (BIB) mid-infrared (4 to 28 um) detectors developed by IMEC. These prototypes feature 88 pixels hybridized on an integrated cryogenic readout electronics (CRE). They were deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf4a4607f3967df4dec4ed8339e6a3a5
http://arxiv.org/abs/0807.1410
http://arxiv.org/abs/0807.1410
Autor:
Padmakumar Ramachandra Rao, Deniz Sabuncuoglu Tezcan, Mehmet Akif Erismis, Koen De Munck, Piet De Moor, Kiki Minoglou, Joeri De Vos
Publikováno v:
Journal of Micromechanics and Microengineering. 21:074006
In this paper we present a successful integration scheme of a backside (BS) illuminated 1024 × 1024 pixel, 30 µm thin, sensor array that is flip chipped on a read-out IC die with 10 µm diameter indium micro bumps, where the pixel pitch is 22.5 µm
Autor:
Jean-Yves Duboz, Sara Martin Horcajo, Ali BenMoussa, Fabrice Semond, Robert Mertens, Joachim John, Peter Verhoeve, Kiki Minoglou, Pawel E. Malinowski, Eric Frayssinet, Marco Esposito, Chris Van Hoof, B. Giordanengo, Piet De Moor
Publikováno v:
Applied Physics Letters, ISSN 0003-6951, 2011, Vol. 98, No. 14
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where