Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Kiichi Komatsubara"'
Publikováno v:
Synthetic Metals. 25:39-47
Soft X-ray standing waves with wavelength equal to twice the distance between successive carbon layers are observed by measuring the synchrotron-radiation-pumped soft X-ray absorption spectrum of SiCl 4 -graphite intercalation compounds. It is shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a13f2128a904127ee50dcb769797ce
https://doi.org/10.1016/0379-6779(88)90321-9
https://doi.org/10.1016/0379-6779(88)90321-9
Publikováno v:
Journal of Physics and Chemistry of Solids. 37:315-319
Backscattering yields of 1.5 MeV−He + ions and low temperature photoluminescence (PL) spectra were measured in GaP crystals implanted with 200 keV−N + ions as functions of ion-dose, temperature during implantation and annealing temperature after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::286d6cbc501c054b1163851a782b19b1
https://doi.org/10.1016/0022-3697(76)90093-7
https://doi.org/10.1016/0022-3697(76)90093-7
Publikováno v:
Physical Review Letters. 39:143-146
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abd78632e2a3a82d9c73207bd45b3f50
https://doi.org/10.1103/physrevlett.39.143
https://doi.org/10.1103/physrevlett.39.143
Autor:
K.L.I. Kobayashi, H. Kawamura, Shuzo Takano, Sadakichi Hotta, Kiichi Komatsubara, Yoshiki Kato
Publikováno v:
Journal of the Physical Society of Japan. 37:1007-1015
From magnetoplasma experiments at 50 GHz for n -Pb 1- x Sn x Te (0≤ x < 0.3), a static dielectric constant e s is determined as a function of x . For x =0, 0.063, 0.091, 0.152 and 0.293, e s is found to be 1410, 1770, 2840, 4610 and 10800 at 1.6 K,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2bd2ce1fdb913a160e01f735eeef699
https://doi.org/10.1143/jpsj.37.1007
https://doi.org/10.1143/jpsj.37.1007
Publikováno v:
Journal of Applied Physics. 45:3554-3561
Red luminescence in CdS has been studied in as‐grown and ion‐implanted crystals. An IR band consisting of two emission bands, IR1 and IR2, is produced by ion implantation. The higher‐energy band, IR1, has the same origin as the R band observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da67a0df569d7a5b2d0059bc0b7b0b7e
https://doi.org/10.1063/1.1663817
https://doi.org/10.1063/1.1663817
Publikováno v:
Journal of Crystal Growth. 45:287-291
Low temperature growth of silicon epitaxial layers has been performed by two methods: by molecular beam epitaxy and by solid-phase crystallization of amorphous films deposited onto crystalline substrates under ultra-high vacuum.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::779548e34fe0120a066de58a2228bdeb
https://doi.org/10.1016/0022-0248(78)90451-7
https://doi.org/10.1016/0022-0248(78)90451-7
Publikováno v:
Journal of Physics and Chemistry of Solids. 37:305-313
Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5227ea13781e7627f662ddd2c88895b9
https://doi.org/10.1016/0022-3697(76)90092-5
https://doi.org/10.1016/0022-3697(76)90092-5
Autor:
Kiichi Komatsubara, T Hoshino, Mineo Kobayashi, Sei-ichi Tanuma, Katsuya Okabe, Toshio Katsuyama, S Sasaki, K Tsukimura
Publikováno v:
Synthetic Metals. 12:371-376
A typical chloride of group IV element, SiCl 4 , has been intercalated into graphite using two temperature furnace method with excess chlorine gas. A variety of the stages has not yet been obtained. X-ray analysis shows a repeat distance along the c-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76107956445c2222709cede67e364b73
https://doi.org/10.1016/0379-6779(85)90137-7
https://doi.org/10.1016/0379-6779(85)90137-7
Publikováno v:
Journal of the Physical Society of Japan. 42:1632-1639
The conductivity of n -type inversion layers in silicon MOS field-effect transistors near threshold is studied as a function of electron concentration n s , temperature and magnetic field. In the specimens with a small amount of disorder at the inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08811d4d33b2d1843f8cb32de671b236
https://doi.org/10.1143/jpsj.42.1632
https://doi.org/10.1143/jpsj.42.1632
Publikováno v:
Journal of Applied Physics. 45:1044-1049
The electrical conductivity of disordered layers in GaAs produced by ion implantation has been studied as a function of ion species, dose level, energy of implanted ions, and anneal temperature. The resistivity of the implanted layer, ρ, at room tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a1ca2f84d1f8986b782a5fcb4ca301b
https://doi.org/10.1063/1.1663366
https://doi.org/10.1063/1.1663366