Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kie-Young Lee"'
Autor:
Kie-Young Lee
Publikováno v:
Solid-State Electronics. 130:63-69
The effect of the velocity saturation region (VSR) on the impedance field of proto-type MOSFET devices, which operate in the saturation region, was investigated to analyze the drain thermal noise. An enhanced impedance field for the drain thermal noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122aa748ae47f06a1ee94baac240d896
https://doi.org/10.1016/j.sse.2017.01.012
https://doi.org/10.1016/j.sse.2017.01.012
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 17:1034-1040
The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a10a68fb473ade9f75c3cad9fd0d74f
https://doi.org/10.4313/jkem.2004.17.10.1034
https://doi.org/10.4313/jkem.2004.17.10.1034
Autor:
E. Martinez, P. Robertson, J. Robertson, B. Lund, Trond Ytterdal, Michael Shur, Kie Young Lee
Publikováno v:
IEEE Transactions on Electron Devices. 43:845-851
A simple and accurate circuit model for Heterostructure Field Effect Transistors (HFETs) is proposed to simulate both the gate and the drain current characteristics accounting for hot-electron effects on gate current and the effect of the gate curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b72cb3a43f2850ae9473c5d390afcb5d
https://doi.org/10.1109/16.502114
https://doi.org/10.1109/16.502114
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
High power device has numerous applications in display and communication systems. LDMOSFET (lateral double-diffused MOSFET) is suitable for these applications because of their high blocking voltage, low on-resistance, and high frequency performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e715f04138c9c9a246aed9dbcfb37c3
https://doi.org/10.1109/isdrs.2011.6135373
https://doi.org/10.1109/isdrs.2011.6135373
Publikováno v:
Solid-State Electronics. 36:1563-1570
A systematic technique for power spectral density estimation, called the correlogram method, which gives a statistically consistent spectral estimation with finite data sets, is applied to estimate the power spectral densities of noise currents in se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84870caf1752d5ff68a1aac552033495
https://doi.org/10.1016/0038-1101(93)90028-o
https://doi.org/10.1016/0038-1101(93)90028-o
Publikováno v:
Solid-State Electronics. 35:1795-1802
We present a basic analytical MOSFET model which describes both the below and above threshold regimes of device operation. The description is based on a charge control model which uses one unified expression for the effective differential channel cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236d4a838efbbe507377a0ab59ba6bce
https://doi.org/10.1016/0038-1101(92)90263-c
https://doi.org/10.1016/0038-1101(92)90263-c
Publikováno v:
AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360).
A low power 16-b ALU has been designed at the transistor level. The designed ALU performs 16 instructions and has a two-stage pipelined architecture. For low power consumption we propose a new ALU architecture which has efficient propagation (P) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810fa924bbe01b717421dc70b6207def
https://doi.org/10.1109/apasic.1999.824052
https://doi.org/10.1109/apasic.1999.824052
Publikováno v:
1999 IEEE Workshop on Signal Processing Systems. SiPS 99. Design and Implementation (Cat. No.99TH8461).
A low power 8/spl times/8+20-bit MAC is designed minimizing the power consumption at each of the design levels. At algorithm level, a new method for MR-XY operation which saves 40% of transistor counts over conventional methods is proposed. A new Boo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::391c4c5428095e1265e0891323520f40
https://doi.org/10.1109/sips.1999.822380
https://doi.org/10.1109/sips.1999.822380
Publikováno v:
Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030).
A low power 16-bit ALU has been designed, fabricated and tested at the transistor level. The designed ALU performs 16 instructions and has a two-stage pipelined architecture. For low power consumption, we propose a new ALU architecture which has an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::057e1ba268da5ab5ccb35b7f28ee4d4d
https://doi.org/10.1109/tencon.1999.818556
https://doi.org/10.1109/tencon.1999.818556
Autor:
Kie-Young Lee
Publikováno v:
Périodiques Scientifiques en Édition Électronique.
Economie reforms and the « open door » policy in North Korea. The economic development of North Korea has slowed down during the 70's. The major reasons for this tendency are the following : lack of investment resources and manpower, utilization of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e0dc50caef7fb6d13abf84db4bc2b1d
https://www.persee.fr/doc/receo_0338-0599_1991_num_22_3_1515
https://www.persee.fr/doc/receo_0338-0599_1991_num_22_3_1515