Zobrazeno 1 - 10
of 231
pro vyhledávání: '"Kiazadeh A"'
Autor:
Matos, Sérgio, Ma, Yihan, Luo, Qi, Deuermeier, Jonas, Lucci, Luca, Gavriilidis, Panagiotis, Kiazadeh, Asal, Lain-Rubio, Verónica, Phan, Tung D., Soh, Ping Jack, Clemente, Antonio, Pessoa, Luís M., Alexandropoulos, George C.
The demand for unprecedented performance in the upcoming 6G wireless networks is fomenting the research on THz communications empowered by Reconfigurable Inteligent Surfaces (RISs). A wide range of use cases have been proposed, most of them, assuming
Externí odkaz:
http://arxiv.org/abs/2402.13804
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract Industry 4.0 is accelerating the growth of connected devices, resulting in an exponential increase in generated data. The current semiconductor technology is facing challenges in miniaturization and power consumption, demanding for more effi
Externí odkaz:
https://doaj.org/article/1d09bd681c1a4a03a2a1b13aa5ee3098
Autor:
Miguel Franco, Asal Kiazadeh, Jonas Deuermeier, S. Lanceros-Méndez, Rodrigo Martins, Emanuel Carlos
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. I
Externí odkaz:
https://doaj.org/article/ea7766f3216b41b2a91d403e6c455027
Autor:
Carlos Silva, Jonas Deuermeier, Weidong Zhang, Emanuel Carlos, Pedro Barquinha, Rodrigo Martins, Asal Kiazadeh
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alterna
Externí odkaz:
https://doaj.org/article/4ca555241e4548caa7b5314d1654cfe2
Akademický článek
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Akademický článek
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Publikováno v:
AIP Advances, Vol 12, Iss 8, Pp 085017-085017-9 (2022)
This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction o
Externí odkaz:
https://doaj.org/article/0a25de432003488099f7248a38b11e58
Autor:
Carlos Silva, Jorge Martins, Jonas Deuermeier, Maria Elias Pereira, Ana Rovisco, Pedro Barquinha, João Goes, Rodrigo Martins, Elvira Fortunato, Asal Kiazadeh
Publikováno v:
Electronic Materials, Vol 2, Iss 2, Pp 105-115 (2021)
In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive devices with feature sizes as small as 25 µm2 is presented. The devices are patterned via lift-off with a platinum bottom contact and a gold-titanium top cont
Externí odkaz:
https://doaj.org/article/00ea687d8f0e4739b5a59e9a0becc36a
Akademický článek
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Autor:
Maria Elias Pereira, Jonas Deuermeier, Pedro Freitas, Pedro Barquinha, Weidong Zhang, Rodrigo Martins, Elvira Fortunato, Asal Kiazadeh
Publikováno v:
APL Materials, Vol 10, Iss 1, Pp 011113-011113-10 (2022)
Neuromorphic computation based on resistive switching devices represents a relevant hardware alternative for artificial deep neural networks. For the highest accuracies on pattern recognition tasks, an analog, linear, and symmetric synaptic weight is
Externí odkaz:
https://doaj.org/article/2e64361e8a8c43d298b5df7b5e89a651