Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Kian Siong Ang"'
Autor:
Jia Xu Brian Sia, Xiang Li, Jiawei Wang, Wanjun Wang, Zhongliang Qiao, Xin Guo, Chee Wei Lee, Ashesh Sasidharan, S. Gunasagar, Callum G. Littlejohns, Chongyang Liu, Graham T. Reed, Kian Siong Ang, Hong Wang
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-9 (2022)
The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the abs
Externí odkaz:
https://doaj.org/article/d857ec08d1f7423bab9726c960426494
Autor:
Jia Xu Brian Sia, Xiang Li, Wanjun Wang, Zhongliang Qiao, X. Guo, Jiawei Wang, Callum G. Littlejohns, Chongyang Liu, Graham T. Reed, Kian Siong Ang, Hong Wang
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 6, Pp 1-5 (2021)
The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communication
Externí odkaz:
https://doaj.org/article/f03ffe0a9c7f4d50ae9453485c92da99
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 40-44 (2017)
In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structu
Externí odkaz:
https://doaj.org/article/c3b6cfd5334742abaaf72a69a0bc07de
Autor:
Hong Wang, Wanjun Wang, Jia Xu Brian Sia, Callum G. Littlejohns, Kian Siong Ang, Jiawei Wang, Chongyang Liu, Zhongliang Qiao, Xin Guo, Graham T. Reed, Xiang Li
The 2 μm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba7daf24b1a2f794f5ae2e66ca17f90
https://hdl.handle.net/10356/153723
https://hdl.handle.net/10356/153723
Autor:
Nethaji Dharmarasu, Zilong Wang, Tng Lihuang, Kian Siong Ang, M. Agrawal, Annalisa Bruno, L. Ravikiran, Cesare Soci, K. Radhakrishnan
Publikováno v:
IEEE Sensors Journal. 17:72-77
For the development of GaN-based ultraviolet (UV) photodetectors, a simple epilayer structure consisting of GaN (600 nm)/AlN (200 nm) was grown on 100-mm Si substrate using ammonia-molecular beam epitaxy growth technique. The epilayers were crack-fre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 40-44 (2017)
In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structu
Autor:
Jianjun Gao, Qianqian Meng, Yang Tian, Hong Wang, Bo Gao, Kian Siong Ang, Chongyang Liu, Xin Guo
Publikováno v:
Microwave and Optical Technology Letters. 58:2156-2162
Autor:
Jianjun Gao, Chongyang Liu, Xin Guo, Hong Wang, C. M. Manoj Kumar, Kian Siong Ang, Yang Tian, Bo Gao, Qian Qian Meng
Publikováno v:
IEEE Photonics Technology Letters. 26:1952-1955
InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs se
Publikováno v:
IEEE Photonics Journal. 6:1-6
Publikováno v:
Infrared Physics & Technology. 59:182-187
Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time ar