Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Kian Hua Tan"'
Publikováno v:
AIP Advances, Vol 13, Iss 12, Pp 125221-125221-6 (2023)
Indium antimonide bismide (InSbBi) has emerged as a highly promising material for long-wavelength infrared photodetection devices due to its unique small energy bandgap (
Externí odkaz:
https://doaj.org/article/99e56ba0d9724d349dd7191a2ac29a16
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045203-045203-5 (2021)
We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (
Externí odkaz:
https://doaj.org/article/9c7d2ab0fd9144abb1a660b2827c9982
Publikováno v:
Materials Science and Engineering: B. 294:116533
Autor:
Jishen Zhang, Haiwen Xu, Kian Hua Tan, Satrio Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Jishen Zhang, Haiwen Xu, Gong Zhang, Kian Hua Tan, Satrio Wicaksono, Soon Fatt Yoon, Xiao Gong
Publikováno v:
Advanced Photon Counting Techniques XVI.
Autor:
Jishen Zhang, Haiwen Xu, Gong Zhang, Yue Chen, Haibo Wang, Kian Hua Tan, Satrio Wicaksono, Chen Sun, Qiwen Kong, Chao Wang, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong
Publikováno v:
Quantum Science and Technology. 8:025009
We have demonstrated the integrated indium gallium arsenide/indium aluminum arsenide (InGaAs/InAlAs) single-photon avalanche diodes (SPAD) with silicon (Si) waveguides and grating couplers on the Silicon-on-insulator substrate. A vertical coupling sc
Publikováno v:
IEEE Photonics Technology Letters. 31:1670-1673
We propose a low temperature grown Be-doped InGaAs vertically aligned barrier structure to increase the dark electrical resistivity of the $1.55~\mu \text{m}$ photoconductive switch. The insertion of a 100 nm-thick AlAs0.56 Sb0.44 barrier layer with
Autor:
Soon Fatt Yoon, Etienne Rodriguez, Kian Hua Tan, Wang Qijie, Wang Chongwu, Carlo Sirtori, Satrio Wicaksono, Kwang Hong Lee
Publikováno v:
2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM).
Ge buffer layer was introduced between the AlGaAs/GaAs quantum well infrared photodetectors active region and Si substrate, reducing threading dislocation density. The QWIPs on both Si and GaAs substrate exhibit similar responsivity, and detectivity.
Autor:
Fangyuan Sun, Jinghao Li, Kian Hua Tan, Satrio Wicaksono, Yun Da Chua, Chongwu Wang, Mingjin Dai, Voo Qin Gui Roth, Soon Fatt Yoon, Qi Jie Wang
Publikováno v:
Optics Express. 30:35999
We report a cost-efficient method to demonstrate the beam combining of five laser elements in an array of tunable slot waveguide quantum cascade lasers in the mid-infrared region at around 10 µm. An aspherical lens with five fine-tuned mini mirrors