Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kian Heng Goh"'
Publikováno v:
Thin Solid Films. 642:352-358
The effects of oxidation temperatures on metal-oxide-semiconductor characteristics of sputtered zirconium thin films on germanium systematically investigated in an oxygen ambient. The samples were oxidized for 15 min at temperatures varying between 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc3efa833572e59b46f186afe2f7a1a4
https://doi.org/10.1016/j.tsf.2017.10.008
https://doi.org/10.1016/j.tsf.2017.10.008
Publikováno v:
Journal of Alloys and Compounds. 722:729-739
Thermal oxynitridation of 20 nm sputtered pure samarium metal film on silicon substrates were carried out in nitrous oxide gas ambient at various temperatures (600–900 °C) for 15 min. Influences of the oxynitridation temperature on the structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe9dd8b04b3f3c32a6149c21ebd501c
https://doi.org/10.1016/j.jallcom.2017.06.179
https://doi.org/10.1016/j.jallcom.2017.06.179
Publikováno v:
Materials Science in Semiconductor Processing. 68:302-315
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated circuits will increase exponentially every two to three years as predicted by Moore's Law. Some problems were occurred in conventional silicon dioxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520d27dfc0dd7759bd20200ef0870657
https://doi.org/10.1016/j.mssp.2017.06.037
https://doi.org/10.1016/j.mssp.2017.06.037
Publikováno v:
Micro & Nano Letters. 12:347-351
Formation of anodic samarium oxide thin film by anodisation of 15 nm thin sputtered samarium metal on silicon substrate was systematically investigated. Sputtered Sm on Si substrate was followed by anodisation in 0.01 M NaOH (pH 11) at various applie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd3dd6b9e678d827c004cc0047a9c51
https://doi.org/10.1049/mnl.2016.0624
https://doi.org/10.1049/mnl.2016.0624
Autor:
Yew Hoong Wong, Kian Heng Goh
Publikováno v:
2018 20th International Conference on Electronic Materials and Packaging (EMAP).
In this work, metal-oxide-semiconductor (MOS) properties of oxynitrided Sm film on Si in nitrous oxide environment were investigated and trap-assisted tunneling mechanism through the oxide were quantitatively analysed. The effects of oxynitridation t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e6af7bdec1b68daf17f274ab0d14d7b
https://doi.org/10.1109/emap.2018.8660923
https://doi.org/10.1109/emap.2018.8660923
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:4725-4731
The morphology, topography, and electrical properties of sputtered pure samarium metal film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures (600–900 °C) for 15 min had been investigated quantitatively. Effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef8af534e99b8c83edca92bafb53e67e
https://doi.org/10.1007/s10854-016-6115-8
https://doi.org/10.1007/s10854-016-6115-8
Publikováno v:
Journal of Electronic Materials. 45:5302-5312
Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7fbce33816adc5e360d33242b30eac3
https://doi.org/10.1007/s11664-016-4694-z
https://doi.org/10.1007/s11664-016-4694-z
Publikováno v:
Thin Solid Films. 606:80-86
Growth of 150 nm Sm2O3 films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71100742eb7350c1869f910864e5116a
https://doi.org/10.1016/j.tsf.2016.03.051
https://doi.org/10.1016/j.tsf.2016.03.051
Aggressive miniaturization that leads to high circuit density is needed for the current mechanism of samarium (MOS) industry. Greater device functionality and performance at lower cost are required. This trend has forced the gate oxide thickness to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a17a86ec5ff3c0d7af306284268e4d8
https://doi.org/10.1016/b978-0-12-803581-8.04073-x
https://doi.org/10.1016/b978-0-12-803581-8.04073-x
Publikováno v:
2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference.
Electrical, microstructural, and surface roughness of 150 nm sputtered pure samarium metal film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures (600–900 °C) for 15 min have been investigated quantitatively. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f949cdbe0162476e690aea4687dd8b
https://doi.org/10.1109/iemt.2016.7761971
https://doi.org/10.1109/iemt.2016.7761971