Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ki-Young Yun"'
Publikováno v:
Solid State Phenomena. :63-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df582b9d04d47476c73733b60c7cf2ce
https://doi.org/10.4028/www.scientific.net/ssp.103-104.63
https://doi.org/10.4028/www.scientific.net/ssp.103-104.63
Autor:
Yeong-lyeol Park, Ki-Young Yun, Jiwoong Sue, Kwang-jin Moon, Chilhee Chung, So-Young Lee, Jin-ho An, Gil-heyun Choi, Byung-lyul Park, Ho-Jun Lee, Ho-Kyu Kang, Do-Sun Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Stresses induced by the large volume of Cu in Through Silicon Vias (TSV) can result in global/local Cu extrusion which may affect reliability in 3D chip stacking technologies beyond the 28 nm node for high performance mobile devices. In this work, TS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b198e77574825ebd19eef96489ce54
https://doi.org/10.1109/iitc.2012.6251586
https://doi.org/10.1109/iitc.2012.6251586
Autor:
Eunji Kim, Hyongyol Mun, Yeong L. Park, Sung-Dong Cho, Woon-Seob Lee, Sin-Woo Kang, Ki-Soon Bae, Sangwook Ji, Ki-Young Yun, Jonghoon Cho, Jang-ho Kim
Publikováno v:
3DIC
Control of Cu extrusion and delamination due to CTE mismatch between Si and Cu is a big issue for high reliable TSV formation. In this paper we tried to find some methods to reduce Cu extrusion and to prevent TSV sidewall delamination. It is demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca24e1fcdcd7f437d61eac7ccf33ecde
https://doi.org/10.1109/3dic.2012.6262947
https://doi.org/10.1109/3dic.2012.6262947
Autor:
Sangwook Ji, Sung-Dong Cho, Sin-Woo Kang, Eunji Kim, Kang-Wook Park, Jang-ho Kim, Jae-Chul Kim, Woon Seob Lee, Yeong L. Park, Ki-Soon Bae, Ki-Young Yun, Eun Seung Jung
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
Impacts of through-silicon via (TSV) proximity on various 45nm CMOS devices are evaluated in wafer level. Cu-filled TSVs with 6um (dia.) × 55um (height) were formed using ‘via middle’ process. After finishing BEOL module process, electrical meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98cc6975f235fa45f6c540d122eee0d0
https://doi.org/10.1109/iitc.2011.5940326
https://doi.org/10.1109/iitc.2011.5940326
