Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Ki-Whan Song"'
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5501fa759e8d1df5bca4abc2cafb03af
https://doi.org/10.1109/irps48227.2022.9764447
https://doi.org/10.1109/irps48227.2022.9764447
Autor:
Bu-Il Nam, Youngha Choi, Sungki Hong, Ki-Young Dong, Wontaeck Jung, Sang-Won Park, Soon-Yong Lee, Dooyeun Jung, Byoung-Hee Kim, Eunkyoung Kim, Ki-Whan Song, Jai Hyuk Song, Woo Young Choi
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75220549bce7101181da7adfd3119c3
https://doi.org/10.1109/irps48227.2022.9764437
https://doi.org/10.1109/irps48227.2022.9764437
Publikováno v:
2022 International Conference on Electronics, Information, and Communication (ICEIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f300f518c51a76f06a7e5ed76a128d
https://doi.org/10.1109/iceic54506.2022.9748674
https://doi.org/10.1109/iceic54506.2022.9748674
Autor:
Jai Hyuk Song, Saetbyeol Yoon, Jeongin Choe, Woo Young Choi, Ki-whan Song, Myung-Suk Kim, Kim Taehyeon, Sangyong Yoon
Publikováno v:
International Symposium for Testing and Failure Analysis.
We have adopted various defect detection systems in the front stage of manufacturing in order to effectively manage the quality of flash memory products. In this paper, we propose an intelligent pattern recognition methodology which enables us to dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8eb7b817efcf69a1d6f0dec593807b
https://doi.org/10.31399/asm.cp.istfa2021p0406
https://doi.org/10.31399/asm.cp.istfa2021p0406
Autor:
Bu-il Nam, Eun-Kyoung Kim, Woo Young Choi, Myung-Suk Kim, Jae In Lee, Ki-whan Song, Boh-Chang Kim, Ki-Young Dong, Youngha Choi, Dooyeun Jung, Jai Hyuk Song
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a novel approach for detecting channel hole bending (ChB) defects in vertical NAND flash memory. Such defects are the result of etching process inconsistencies and contribute to data loss and device failure by inducing leakage cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9ff14c83ed8822b7ba75dda66da8f38
https://doi.org/10.31399/asm.cp.istfa2021p0306
https://doi.org/10.31399/asm.cp.istfa2021p0306
Autor:
Lee Dae-Hyeon, Jai Hyuk Song, Ji-Suk Kim, Youngwook Jeong, Earl Kim, Wanha Hwang, Jae-Young Kim, Woo Young Choi, Ki-whan Song, Miju Yang, Eun-Kyoung Kim, Daesik Ham, Sangyong Yoon, Myung-Suk Kim, Taeheon Lee
Publikováno v:
International Symposium for Testing and Failure Analysis.
In the NAND flash manufacturing process, thousands of internal electronic fuses (eFuse) are tuned in order to optimize performance and validity. In this paper, we propose a machine learning optimization technique that uses deep learning (DL) and gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f110c74a7800d6f8be2c838f793c298e
https://doi.org/10.31399/asm.cp.istfa2021p0020
https://doi.org/10.31399/asm.cp.istfa2021p0020
Autor:
Park Se-Hwan, Myung-Hoon Choi, Seonyong Lee, Seung-jae Lee, Jisoo Cho, Garam Kim, Youngsun Song, Ki-chang Jang, Dongku Kang, Young-don Choi, Jisu Kim, Sang-Lok Kim, Hyun-Jun Yoon, Jung-Hwan Choi, Ii Han Park, Jong-Eun Park, Kyung-Hwa Kang, Jaeheon Jeong, Heejin Kim, Dong-Hyun Shin, Sung-Min Joe, Joonsoo Kwon, Jonghoo Jo, Lee Han-Jun, Hyung-Gon Kim, Doohyun Kim, Jungmin Park, Joon-Suc Jang, Dae-Seok Byeon, Kanabin Lee, Jungkwan Kim, Jinbae Bang, Jeong-Don Lim, Park Jiyoon, Seuna Hyun Moon, Sung-Won Yun, Ki-whan Song, Pansuk Kwak, Sohyun Park, Minseok Kim, Joo-Yona Park, Hwajun Jang, Jong Min Kim, Deokwoo Lee, Sang Joon Hwang
Publikováno v:
ISSCC
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for dive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9989443f2344302b522d4cc39c05051f
https://doi.org/10.1109/isscc19947.2020.9063053
https://doi.org/10.1109/isscc19947.2020.9063053
Autor:
Dongku Kang, Minsu Kim, Su Chang Jeon, Wontaeck Jung, Jooyong Park, Gyosoo Choo, Dong-kyo Shim, Anil Kavala, Seung-Bum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun-Wook Park, Byung-Jun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyunjin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Youngsun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-ghee Hahn, Ki-sung Kim, Kyungmin Kim, Euisang Yoon, Won-Tae Kim, Inryoul Lee, Seung hyun Moon, Jeongdon Ihm, Dae Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kye Hyun Kyung
Publikováno v:
ISSCC
Data storage is one of the hottest discussion topics in today’s connected world. The amount of data growth is expected to be exponential, while budget and space remain constricted. Since the transformation of storage device from planar NAND to 3D V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b04c30039dcb4cf878ce6ca3d1d7c71
https://doi.org/10.1109/isscc.2019.8662493
https://doi.org/10.1109/isscc.2019.8662493
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 24:764-768
In recent years, the demand for NAND flash-based storage devices has rapidly increased because of the popularization of various portable devices. NAND flash memory (NFM) offers many advantages, such as nonvolatility, high performance, the small form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30bab208352b48cca2888496db38fc5e
https://doi.org/10.1109/tvlsi.2015.2409055
https://doi.org/10.1109/tvlsi.2015.2409055
Autor:
Chanho Yoon, Shine Kim, Kitae Park, Jaechun Park, Yu Geunyeong, Jin-hyeok Choi, Jaeheon Jeong, Sangyeun Cho, Daniel D. G. Lee, Dongku Kang, Seonghoon Woo, Han Kyuwook, Ki-whan Song, Youra Adel Choi, Chulseung Lee, Jae Hong Kim, Woo-Seong Cheong, Dae Hyun Kim, Hwaseok Oh
Publikováno v:
ISSCC
In a memory hierarchy, there are various classes of memory systems depending on the access latency. A typical memory hierarchy consists of a CPU cache, DRAM, and an SSD or HDD. The DRAM has an access latency of 100ns, while flash memory has a latency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c1df143498e3c8f3e9a5a5bb1d72be0
https://doi.org/10.1109/isscc.2018.8310322
https://doi.org/10.1109/isscc.2018.8310322